In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O3 Thin Film by High Temperature XRD and Electrical Measurement Apparatus

2006 ◽  
Vol 320 ◽  
pp. 53-56 ◽  
Author(s):  
Toru Onoue ◽  
Naoki Wakiya ◽  
Koichi Seo ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
High Temperature ◽  
Electrical Measurement ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Xrd ◽  
Phase Transition Temperatures

Pb(Zr0.05Ti0.95)O3/(La,Sr)CoO3 thin films were prepared by pulsed laser deposition (PLD) on SrTiO3(001) substrates. Phase transition behavior of Pb(Zr0.05Ti0.95)O3 (PZT) was investigated using high temperature X-ray diffraction (HT-XRD) and high-temperature electrical measurement. The phase transition temperature of PZT thin film is larger than bulk one. In 100 and 200nm-thickness epitaxial PZT thin films, the phase transition temperatures obtained from X-ray diffraction measurement and electrical property measurement are in good agreement.

PREFERABLE ORIENTATION OF CRYSTALLINE THIN-FILM OF MODIFIED BNN SYSTEM

1989 ◽  
Vol 03 (06) ◽  
pp. 465-470 ◽  
Author(s):  
MASAYUKI TSUKIOKA ◽  
TASUKU MASHIO ◽  
MASAJI SHIMAZU ◽  
TAKESHI NAKAMURA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Steel Substrate ◽  
Rf Sputtering ◽  
Polished Surface ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantitative Analyses

Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long stainless steel substrate (5×100 mm ). The result indicated that preferable orientation was dominant near the position of plasma center. In order to distinguish whether the strong X-ray peak observed in the preferably aligned BNN thin-film is due to (200) peak of Nb 2 O 5 or (440) peak of BNN, X-ray measurements and the following quantitative analyses; fluorescent X-ray, ICP (Induced Coupled Radio Frequency Plasma) and an Atomic Absorption Method, were carried out for films sputtered from Nb-rich BNN target. The results reveal that the thin-films include considerable quantity of barium and sodium. This suggests that the highly aligned thin-film is composed of modified BNN and not Nb 2 O 5.

Modulus and Internal Friction of W-Doped VO2 Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 3343-3346 ◽  
Author(s):  
H.Q. Li ◽  
X.X. He ◽  
T. Liu ◽  
Z.H. Nie ◽  
X.Q. Lv
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Internal Friction ◽  
Transition Temperatures ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Metal Phase Transition ◽  
Deposition Techniques

The thin films of W-doped VO2were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2is more than that of un-doped VO2, but more smoother.

Phase transition behavior of BaTiO3 thin films using high-temperature x-ray diffraction

1999 ◽  
Vol 86 (8) ◽  
pp. 4555-4558 ◽  
Author(s):  
Chunling Li ◽  
Zhenghao Chen ◽  
Dafu Cui ◽  
Yueliang Zhou ◽  
Huibin Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
High Temperature ◽  
X Ray Diffraction ◽  
Phase Transition Behavior ◽  
X Ray ◽  
Transition Behavior

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals High-temperature phase transition of SrRuO3and SrHfO5: X-ray diffraction and PAC spectroscopy

1996 ◽  
Vol 52 (a1) ◽  
pp. C364-C364
Author(s):  
J. A. Guevara ◽  
S. L. Cuffini ◽  
Y. P. Mascarenhas ◽  
P. de la Presa ◽  
A. Ayala ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Pac Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Phase Transition

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

INDUCED CHANGES OF THERMOTROPIC PROPERTIES OF PHASE TRANSITIONS BETWEEN SMECTIC A MESOPHASE AND ISOTROPIC LIQUID: EFFECT OF SURFACES

2006 ◽  
Vol 20 (14) ◽  
pp. 821-833 ◽  
Author(s):  
ARIF NESRULLAJEV ◽  
ŞENER OKTIK
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Phase Transitions ◽  
Isotropic Liquid ◽  
Smectic A ◽  
Phase Transition Temperatures ◽  
Smectic A Phase ◽  
Induced Changes ◽  
Thermotropic Properties

In this work, the effect of thin films on the thermotropic and thermo-optical properties and peculiarities of the phase transitions between the smectic A and isotropic liquid have been investigated. Peculiarities of the heterophase regions of the straight smectic A-isotropic liquid and reverse isotropic liquid-smectic A phase transitions have been studied. Change of morphologic properties of the heterophase regions, shift of the phase transition temperatures and the change of temperature widths of these heterophase regions under thin film influence have been observed.

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