From Atomic-Level Lattice Structure to Estimate the Silicon Mechanical Bulk Behaviour Using the Atomistic-Continuum Mechanics
2007 ◽
Vol 334-335
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pp. 281-284
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Keyword(s):
This paper proposes a novel atomistic-continuum mechanics (ACM) based on the finite element method (FEM) to investigate the mechanical bulk behavior of atomic-level single crystal silicon under uniaxial tensile loading. The ACM could be reduced efficiently the computational time and maintained the simulation accuracy. A general form of Stillinger-Weber potential function was used for interaction between the silicon atoms in the ACM simulations. Simulation results shows that the Young’s modulus of single crystal silicon were 121.8, 153 and 174.6 GPa along the (100), (110) and (111) crystallographic plane, respectively. These results are in reasonable agreement with the experiment and simulation results reported in the literature.
2007 ◽
Vol 2007.1
(0)
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pp. 727-728
Keyword(s):
Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition
2005 ◽
Vol 117
(1)
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pp. 143-150
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Keyword(s):
Keyword(s):
2009 ◽
Vol 2009.1
(0)
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pp. 39-40
Keyword(s):
1985 ◽
Vol 43
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pp. 300-301
1992 ◽
Vol 112
(9)
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pp. 835-839
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