Crack Healing, Reopening and Thermal Expansion Behavior of Al2TiO5 Ceramics at High Temperature

2007 ◽  
Vol 336-338 ◽  
pp. 2448-2450 ◽  
Author(s):  
Ik Jin Kim ◽  
Kee Sung Lee ◽  
Christos G. Aneziris

The low thermal expansion (α25-1100oC = 0.05 ~ 1.6 × 10–6/K) of Al2TiO5 ceramics are apparently due to a combination of grain boundary micro cracking caused by the large thermal expansion anisotropy of the crystal axes of the Al2TiO5 phase. During the reheating run, the individual crystallites expanded at low temperature; thus, the solid volume of the specimen expanded into the micro cracks, where as the macroscopic dimensions remained almost unchanged. As a result, the material expanded very little. The micro cracks closed at higher temperatures. This result is closely related to relatively steeper thermal expansion curves.

2008 ◽  
Vol 22 (31n32) ◽  
pp. 6016-6021 ◽  
Author(s):  
K. A. LEE ◽  
J. NAMKUNG ◽  
M. C. KIM

The effect of high temperature deformation on the low thermal expansion property of Fe -29 Ni -17 Co alloy was investigated in the compressive temperature range of 900~1300°C at a strain rate range of 25 ~ 0.01 sec. -1. The thermal expansion coefficient (α30~400) generally increased with increasing compressive temperature. In particular, α30~400 increased remarkably as the strain rate decreased at temperatures above 1100°C. Note, however, that α30~400 at low compressive temperatures (900°C and 1000°C) increased abnormally at high strain rates. Based on the investigation of various possibilities of change in low thermal expansion behavior, the experimental results indicated that both the appearance of the α phase and evolution of grain size due to hot compression clearly influenced the low thermal expansion behavior of this invar-type alloy. The correlation between the microstructural cause and invar phenomena and theoretical explanation for the low thermal expansion behavior of Fe -29% Ni -17% Co were also suggested.


2007 ◽  
Vol 27 (2-3) ◽  
pp. 1431-1434 ◽  
Author(s):  
Hyung Chul Kim ◽  
Kee Sung Lee ◽  
Oh Seong Kweon ◽  
Christos G. Aneziris ◽  
Ik Jin Kim

2007 ◽  
Vol 280-283 ◽  
pp. 1179-1184 ◽  
Author(s):  
Ik Jin Kim ◽  
Hyung Chul Kim ◽  
In Sub Han ◽  
Christos G. Aneziris

High temperature structural ceramics based on Al2TiO5-ZrTiO4 (ZAT) having excellent thermal-shock-resistance were synthesized by a reaction sintering. The ZAT ceramics sintered at 1600oC had a negative thermal expansions up to 1000oC and a much lower thermal expansion coefficient (0.3 ~ 1.3 x 10-6 /K) than that of polycrystalline Al2TiO5 (1.5 x 10-6 /K). These low thermal expansion are apparently due to a combination of microcracking caused by the large thermal expansion anisotropy of the crystal axes of the Al2TiO5 phase. The microstructural degradation of the composites after various thermal treatment for high temperature applications were analyzed by scanning electron microscopy, X-ray diffraction, ultrasonic and dilatometer.


2019 ◽  
Vol 821 ◽  
pp. 435-439
Author(s):  
Bo Li ◽  
Ke Jing ◽  
Hai Bo Bian

Low temperature sintered MgO-Al2O3-SiO2 glass-ceramic with high mechanical and low thermal expansion was prepared for package. The remarkable influence of B2O3 addition on the electrical, mechanical, and thermal properties was fully investigated. A small amount of B2O3 promoted the sintering process and improved the densification of MAS. The kinetics via Kissinger method indicated that an appropriate B2O3 content decreased the activation energy and helped the occurrence of crystallization. Due to the increase of crystallinity and indialite phase, B2O3 addition significantly enhanced flexural strength and Young’s modulus. MAS doped with 3wt% B2O3 can be sintered at 900 °C and obtained good properties: σ = 229 MPa, φ = 86 GPa, α = 1.66×10-6 /°C, εr = 5.29, and tanδ = 5.9×10-4.


1981 ◽  
Vol 5 ◽  
Author(s):  
G. Rajeswaran ◽  
M. Thayer ◽  
V. J. Rao ◽  
W. A. Anderson

ABSTRACTWacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.


2015 ◽  
Vol 131 ◽  
pp. 399-406 ◽  
Author(s):  
Kayoko Kobayashi ◽  
Satoshi Kimura ◽  
Philip-Kunio Naito ◽  
Eiji Togawa ◽  
Masahisa Wada

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