Advantages of MIS Processing on Passivated Polycrystalline Silicon
Keyword(s):
ABSTRACTWacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.
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