Microstructure of Fe-Based ODS High-Temperature Alloy Sheet Prepared by EBPVD

2007 ◽  
Vol 353-358 ◽  
pp. 1637-1640 ◽  
Author(s):  
Xiu Lin ◽  
Yue Sun ◽  
Guang Pin Song ◽  
Xiao Dong He
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Orientation Angle ◽  
Alloy Sheet ◽  
Columnar Microstructure ◽  
High Temperature Alloy ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

Large-sized Fe-based ODS (Oxide Dispersive Strengthen) high-temperature alloy sheets were successfully synthesized by EBPVD (Electron Beam Physical Vapor Deposition) technique. The sheets were about 120μm thick, and having a diameter of 1000mm, whose surface roughness was less than 1μm (Ra<1μm). The microstructures were examined by SEM (Scanning Electron Microscope). The grain size was 1-4μm. When the substrate temperature was 600°C, the sheet had sharp irregular polyhedral grain, and when the substrate temperature was 700°C the sheet had quite regular grains. The morphological orientation angle increased with the distance from the center of the sheet. During the first period of deposition, the sheet was growing in a G-L-S mode, which corresponded with the corn-like microstructure in the cross-section. While during the final period, the sheet changed into a G-S growing mode, which corresponded to the smooth columnar microstructure.

Low Temperature Laser Physical Vapor Deposition of Multilayered Thin Films

1989 ◽  
Vol 158 ◽  
Author(s):  
N. Biunno ◽  
J. Krishnaswamy ◽  
S. Sharan ◽  
L. Ganapathi ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Target Holder ◽  
Multi Stage ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have investigated the formation of various multilayer thin films by the laser physical vapor deposition technique. A multi stage target holder was constructed to perform all process steps in-situ; target/substrate cleaning, deposition, and annealing. The laser physical vapor deposition technique offers many advantages over conventional physical vapor techniques, such as, lower substrate temperature, microstructural control, and very low contamination levels. Film thickness can be controlled from near atomic to micron dimensions. A layer-by-layer (two dimensional) growth can be achieved, resulting in nonequilibrium structures. The films were analyzed using cross-section and high resolution transmission electron microscopy (TEM). The significant reduction in substrate temperature for the formation of high quality multilayer and epitaxial films opens up many new areas of applications requiring reduced thermal-budget processing.

scholarly journals High temperature dielectric properties of (BxNyOz) thin films deposited using ion source assisted physical vapor deposition

2015 ◽  
Vol 05 (04) ◽  
pp. 1550029
Author(s):  
N. Badi
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thermal Characterization ◽  
Ion Source ◽  
Dielectric Films ◽  
Metal Electrodes ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique ◽  
Electrical Loss

The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

DEPOSITION OF THIN FILM COPPER NANOSTRUCTURES BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION TECHNIQUE ON SiO2/p-TYPE Si(100) AND STUDY OF ITS OXIDATION BEHAVIOR

2011 ◽  
Vol 25 (19) ◽  
pp. 2567-2574 ◽  
Author(s):  
M. YEGANEH ◽  
M. SAREMI
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Oxidation Behavior ◽  
X Ray Diffraction ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique ◽  
P Type

Electron beam physical vapor deposition (EBPVD) is being used in coating components for many applications such as for producing nanostructures and integrated circuits (ICs) coating in electronic industry. In this work, copper was deposited on the SiO 2/p-type Si (100). Thin film characteristics are investigated by scanning electron microscopy and X-ray diffraction (XRD). Then oxidation behavior of deposits was evaluated by Dektak Surface Profiler and weight gain method at 200 and 300°C. Results showed that thin film copper deposited by EBPVD has better oxidation characteristics in comparison with copper foil.

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