DEPOSITION OF THIN FILM COPPER NANOSTRUCTURES BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION TECHNIQUE ON SiO2/p-TYPE Si(100) AND STUDY OF ITS OXIDATION BEHAVIOR
2011 ◽
Vol 25
(19)
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pp. 2567-2574
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Keyword(s):
Electron beam physical vapor deposition (EBPVD) is being used in coating components for many applications such as for producing nanostructures and integrated circuits (ICs) coating in electronic industry. In this work, copper was deposited on the SiO 2/p-type Si (100). Thin film characteristics are investigated by scanning electron microscopy and X-ray diffraction (XRD). Then oxidation behavior of deposits was evaluated by Dektak Surface Profiler and weight gain method at 200 and 300°C. Results showed that thin film copper deposited by EBPVD has better oxidation characteristics in comparison with copper foil.
2003 ◽
Vol 57
(26-27)
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pp. 4170-4175
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2011 ◽
Vol 55-57
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pp. 183-187
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2015 ◽
Vol 15
(8)
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pp. 6020-6023
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2021 ◽
2012 ◽
Vol 2012
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pp. 1-5
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