Microstructure and Dielectric Properties of LixTixNi1-2xO Thin Films

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.

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Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.2639 ◽

2007 ◽

Vol 336-338 ◽

pp. 2639-2642 ◽

Cited By ~ 3

Author(s):

Ya Ru Zhang ◽

Bo Ping Zhang ◽

Yan Dong ◽

Jing Feng Li

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Room Temperature ◽

Sol Gel ◽

Dielectric Constants ◽

Coating Method ◽

Diffraction Peaks ◽

Ti Content ◽

Ti Doping ◽

Co Doped

Li and Ti co-doped NiO thin films with 200 nm in thickness were deposited onto Pt/Ti/SiO2/ Si(100) substrates using a sol-gel spin-coating method. The effect of Ti doping content on microstructure and dielectric properties of Li0.10TixNi0.90-xO (x=5-20mol%) thin films was investigated. XRD results showed that all the Li0.10TixNi0.90-xO thin films consisted of a mixture of NiO, Li2NiO2 and NiTiO3 oxides. The intensities of the diffraction peaks for the NiTiO3 phase increased and those for NiO decreased with increasing Ti content, suggesting that a part of NiO phase combined with Ti to form NiTiO3 phase. The dielectric constants of all the Li0.10TixNi0.90-xO thin films at 102 Hz at room temperature ranged from 200 to 400 and increased with increasing Ti content. The frequency stability of the dielectric constant for the Li0.10TixNi0.90-xO thin films was also improved greatly with increasing Ti content.

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Study on the Grain Size of Vanadium Dioxide Thin Films using Sol-gel Spin Coating Method

2018 9th IEEE Control and System Graduate Research Colloquium (ICSGRC) ◽

10.1109/icsgrc.2018.8657518 ◽

2018 ◽

Author(s):

Ibrahim Mohd Yazid ◽

Muhammad Hazim Raselan ◽

Shafinaz Sobihana Shariffudin ◽

Puteri Sarah Mohamad Saad ◽

Sukreen Hana ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Vanadium Dioxide ◽

Spin Coating ◽

Sol Gel ◽

Spin Coating Method ◽

Coating Method ◽

Vanadium Dioxide Thin Films

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Acclimating the magnetic behavior of highly (117) oriented Bi4Ti 3-xMnxO12 thin films prepared sol-gel spin coating method

10.1063/5.0017683 ◽

2020 ◽

Author(s):

A. Amali Roselin ◽

N. Anandhan ◽

I. Joseph Paneer Doss ◽

G. Gopu ◽

K. P. Ganesan ◽

...

Keyword(s):

Thin Films ◽

Spin Coating ◽

Sol Gel ◽

Magnetic Behavior ◽

Spin Coating Method ◽

Coating Method

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Influence of Al dopant on microstructure and optical properties of ZnO thin films prepared by sol–gel spin coating method

Optical Materials ◽

10.1016/j.optmat.2006.11.075 ◽

2007 ◽

Vol 30 (2) ◽

pp. 314-317 ◽

Cited By ~ 37

Author(s):

G. Srinivasan ◽

R.T. Rajendra Kumar ◽

J. Kumar

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Zno Thin Films ◽

Spin Coating Method ◽

Coating Method

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The Synthesis and Optical Properties of Zinc-Nitrogen Co-Doped TiO2 Thin Films Using Sol–Gel Derived Spin-Coating Method

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2021.3050 ◽

2021 ◽

Vol 16 (6) ◽

pp. 967-973

Author(s):

Shuai Zhao ◽

Dong-Xue Lin ◽

Yu-Xin Wang

Keyword(s):

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Crystal Plane ◽

Utilization Rate ◽

Doping Content ◽

Spin Coating Method ◽

Co Doping ◽

Coating Method ◽

N Doping

All of the TiO2 films including intrinsic TiO2 film, Zn single doped film with 2.0 at% content and N doped films with 4.0 at%, 6.0 at%, 8.0 at% and 10.0 at% content, were obtained by butyl titanate (Ti(OC4H9)4) as a titanium source, zinc nitrate (Zn(NO3)2·6H2O) as zinc source and urea (H2 NCONH2) as nitrogen source, which was calcined at 600 °C on the glass substrate and Si substrate using sol–gel spin coating method. The structures, morphology and optical properties of various films were analyzed and studied by X ray diffract meter (XRD), ultraviolet-visible spectrophotometer (UV-Vis) and scanning electron microscope (SEM). The results indicated that the main crystal plane of TiO2 film was (101) and any impurity crystal plane didn't appear. All samples had obvious red shifts in the absorbing edge overall and reduced significantly the width of forbidden band, especially, the N doping content with 8.0 at% was surprised to investigate the strongest (101) peak intensity, the sharpest peak type, the best meritocratic orientation, the greatest red shift of the absorption spectrum, the lowest optical band gap value of 3.356 eV, and the highest utilization rate of visible light of the sample. However, the surface morphology of the others films except the N doping content with 8.0 at% is not further improved by co-doping, that is, their surfaces were still rough, had obvious voids and uneven distribution between the grains. Meanwhile, the intensity of the (101) crystalline diffraction peaks of these samples were reduced and the crystalline spacing generally increased after co-doping.

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