Investigation of Mechanical Properties and Microstructure of Boron Films Implanted by Polyenergetic Nitrogen Ion

In this paper, boron films were deposited on W6Mo5Cr4V2 high speed steel (HSS) via ion beam sputtering of boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The mechanical properties of the implanted layer were tested by Vicker`s hardness and SKODA wear tester. The microstructure of the implanted layer was analysed by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (IR) spectroscopy. Experimental results showed that the HSS substrate was intensified obviously after the implantation of boron and nitrogen ion. When the nitrogen dose equals to 12.8×1017 ions/cm2, the hardness reaches its highest value, HV1982 and the relative wearability was increased for about ten times under the load of 30N. XPS depth concentration profiles show an interfacial mixing between film and substrate, and compared with monoenergetic ion implantation, polyenergetic ion implanted layer have an even N/B distribution. Combined with XPS and IR analysis results, It can conclude that boron exists in the form of boron nitride and first as a-BN or h-BN, with the depth decreasing, it has a tendency to transform to c-BN.

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Preparation and Nanomechanical Characterisation of Metal Containing Amorphous Hydrogenated Carbon Nanocomposite Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.431 ◽

2010 ◽

Vol 123-125 ◽

pp. 431-434

Author(s):

P. Vijai Bharathy ◽

D. Nataraj ◽

Q. Yang ◽

D. Mangalaraj ◽

M.S.R.N. Kiran

Keyword(s):

Mechanical Properties ◽

Photoelectron Spectroscopy ◽

Ion Beam ◽

Nanocomposite Films ◽

Metal Carbide ◽

Ion Beam Sputtering ◽

Si Substrates ◽

Beam Sputtering ◽

Ar Gas ◽

Amorphous Hydrogenated Carbon

The relationship between metal-induced chemical bonding and the mechanical properties of Me/a:C-H (Me- Ti and Ni) films are discussed. Nanocomposite films were deposited onto the Si substrates via biased target ion beam sputtering of metal combined with reactive ion beam deposition of a:C-H using CH4/Ar gas mixture. The chemical composition, microstructure and mechanical properties were characterized using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and nanoindentation. XPS analysis revealed that both Ti and Ni atoms were preferentially bonded to carbon to form its metal carbide phase. Irrespective of its kind, both the metal carbide clusters induces more graphite like bondings in a:C-H matrix. From the nanoindentation analysis it was found that there is no crack propagation and damage around the indent region even at very high indentation loads. Additionally, it was found that a:C-H film shows higher hardness compared to that of Ti/a:C-H and Ni/a:C-H films.

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Mechanical properties of TiC/metal multilayers synthesized by ion beam sputtering technique

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1343098 ◽

2001 ◽

Vol 19 (1) ◽

pp. 250 ◽

Cited By ~ 3

Author(s):

Jing Wang ◽

Wen-Zhi Li ◽

Heng-De Li

Keyword(s):

Mechanical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Ion Beam Processing of Optical Materials

MRS Proceedings ◽

10.1557/proc-129-17 ◽

1988 ◽

Vol 129 ◽

Author(s):

F. L. Williams ◽

L. L. Boyer ◽

W. Reicher ◽

J. J. McNally ◽

G. A. Al-Jumaily ◽

...

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Packing Density ◽

Optical Materials ◽

Ion Beam ◽

Film Material ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Optical And Mechanical Properties ◽

Deposition Techniques

ABSTRACTWe have deposited thin films of optical materials using ion beam sputtering and ion assisted deposition techniques. It is possible to obtain good quality film material deposited on substrates at temperatures lower than normally required. Ion assisted deposition influences film stoichiometry and packing density, which in turn determine optical and mechanical properties of the film material. We discuss two general indicators which appear helpful in predicting the degree to which these occur.

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