Fabrication of Dielectric/Conductive Hybrid Artificial Superlattices Using Molecular Beam Epitaxy Method

2009 ◽  
Vol 421-422 ◽  
pp. 139-142
Author(s):  
Yu Yonezawa ◽  
Hiroyuki Kinbara ◽  
Hiroki Umehara ◽  
Hirofumi Kakemoto ◽  
Takuya Hoshina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dielectric Permittivity ◽  
Molecular Beam ◽  
Interfacial Polarization ◽  
Relaxation Frequency ◽  
The Other ◽  
Conductive Layer ◽  
Molecular Beam Epitaxy Method ◽  
Other Hand ◽  
Molecular Layers

Artificial super-lattices of [(BaTiO3)/(SrTiO3)10]4 (BTO10/STO10) were fabricated on STO(001) substrate by the molecular beam epitaxy method (MBE), and the molecular layers of SrRuO3(SRO) was introduced into these superlattices as conductive layers. The superlattices introduced two conductive layers showed the enormous dielectric permittivity. On the other hand, the permittivity of the superlattice introduced one conductive layer was almost same as that of BTO10/STO10. In the case of introducing two conductive layers, the moving electrons between two layers induced the interfacial polarization. Especially, the superlattice with two SRO conductive layers, the distance between these layers in a superlattice is 18 molecular layers, showed the highest relaxation frequency 132 kHz and biggest capacitance.

RELAXATION PROCESS OF ELECTORON-HOLE PAIRS IN Yb-DOPED AlAs/GaAs SUPERLATTICE IN HIGH MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Magnetic Fields ◽  
Relaxation Process ◽  
Molecular Beam ◽  
High Magnetic Fields ◽  
Molecular Beam Epitaxy Method ◽  
Rare Earth Doped ◽  
Photoluminescence Peak ◽  
The Rare Earth

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

2001 ◽  
Vol 43 (6) ◽  
pp. 1012-1017 ◽  
Author(s):  
B. A. Andreev ◽  
Z. F. Krasil’nik ◽  
V. P. Kuznetsov ◽  
A. O. Soldatkin ◽  
M. S. Bresler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Method ◽  
Silicon Structures

Growth and Characterization of Inas Quantum Dots on Silicon

1999 ◽  
Vol 583 ◽  
Author(s):  
L. Hansen ◽  
A. Ankudinov ◽  
F. Bensing ◽  
J. Wagner ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Material System ◽  
Inas Quantum Dots ◽  
New Material ◽  
The One ◽  
Insight Into

AbstractUp to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

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