Organic Photovoltaic Cells Prepared with Toluene Sulfonic Acid Doped Polypyrrole

2010 ◽  
Vol 428-429 ◽  
pp. 450-453 ◽  
Author(s):  
Fu Fang Zhou ◽  
Chun Xu Pan ◽  
Yuan Ming Huang
Keyword(s):  
Indium Tin Oxide ◽  
Sulfonic Acid ◽  
Light Exposure ◽  
Short Circuit ◽  
Photovoltaic Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Organic Photovoltaic ◽  
Organic Photovoltaic Cells ◽  
Toluene Sulfonic Acid

Organic photovoltaic cells were fabricated by sandwiching p-toluene sulfonic acid doped conducting polymer polypyrrole between indium-tin-oxide cathodes and aluminum anodes. The active polymeric layers could effectively absorb incident photons more than 75 % in the entire spectral region of 250~1100 nm. Upon light exposure, the short-circuit current and the open-circuit voltage were recorded up to 0.6 μA/cm2 and 60 mV, respectively, for the organic photovoltaic cells. The dynamics of the generation and decay of the photocurrent and photovoltage in our organic photovoltaic cells were investigated.

scholarly journals Improvement of Open-Circuit Voltage in Organic Photovoltaic Cells with Chemically Modified Indium-Tin Oxide

2013 ◽  
Vol 03 (04) ◽  
pp. 113-120
Author(s):  
Khayankhyarvaa Sarangerel ◽  
Byambasuren Delgertsetseg ◽  
Namsrai Javkhlantugs ◽  
Masaru Sakomura ◽  
Chimed Ganzorig
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Open Circuit Voltage ◽  
Photovoltaic Cells ◽  
Open Circuit ◽  
Organic Photovoltaic ◽  
Organic Photovoltaic Cells ◽  
Chemically Modified

High open circuit voltage organic photovoltaic cells based on oligothiophene derivatives

2006 ◽  
Vol 89 (21) ◽  
pp. 213501 ◽  
Author(s):  
Ping Liu ◽  
Qiang Li ◽  
Mingsheng Huang ◽  
Wanzhang Pan ◽  
Wenji Deng
Keyword(s):  
Open Circuit Voltage ◽  
Photovoltaic Cells ◽  
Open Circuit ◽  
Organic Photovoltaic ◽  
Organic Photovoltaic Cells

Impedance Spectroscopy Study of Organic Photovoltaic Cells with an Inkjet Printed Hole-Extracting Graphene Oxide Layer

2019 ◽  
Vol 955 ◽  
pp. 31-36
Author(s):  
Jan Pospisil ◽  
Alexander Kovalenko ◽  
Veronika Schmiedova ◽  
Oldrich Zmeskal ◽  
Martin Vala
Keyword(s):  
Graphene Oxide ◽  
Impedance Spectroscopy ◽  
Oxide Layer ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Reduced Form ◽  
Organic Photovoltaic Cells ◽  
Electron Blocking Layer

This paper deals with the study of light conversion efficiency of organic photovoltaic cells with an inkjet-printed graphene oxide layer. The graphene oxide is used in this experiment as a hole-extracting, electron blocking layer in bulk heterojunction organic solar cells based on DPP(TBFu)2:PC60BM blend. It is also studied the influence of the GO reduction (chemically, by UV radiation and by annealing) on the final efficiency of photovoltaic conversion. Power conversion efficiency and the transport of charge carriers are evaluated by measuring of current-voltage characteristics and mainly by impedance spectroscopy analysis. In this regard, using of graphene oxide and its reduced form showed negative influence on the device performance caused by an inefficient charge carrier collection at the short-circuit condition.

Nanostructured Molybdenum Trioxide Layer on the Silver Anode of a Top-Incident Organic Photovoltaic Device

2021 ◽  
Vol 21 (3) ◽  
pp. 1659-1666
Author(s):  
Chia-Hsun Chen ◽  
Jiun Haw Lee ◽  
Chien-Liang Lin ◽  
Tien-Lung Chiu
Keyword(s):  
Buffer Layer ◽  
Deposition Rate ◽  
Fill Factor ◽  
Molybdenum Trioxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Organic Photovoltaic ◽  
20 Nm

A nanostructured molybdenum trioxide (MoO3) layer was successfully fabricated utilizing various deposition rates, employed as an anodic buffer layer to separate the active layer from a silver anode and modifying the anodic surface to facilitate hole transportation for top-incident organic photovoltaic (TIOPV) devices. The deposition rate and thickness of the MoO3 layer were crucial parameters for determining the surface morphology and work function, and the internal optical field distribution, respectively. These factors affected the performance of the devices in terms of their open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The baseline TIOPV device without a buffer layer had a power conversion efficiency (PCE) of only 0.47%. By contrast, with a smooth 20-nm MoO3 buffer layer fabricated using a deposition rate of 1 Å/s (which prevented problems caused by the Ag anode), another fabricated TIOPV device had substantially higher VOC, JSC and FF values, which improved the PCE by a factor of 6.2 to 2.92%. When an additional 5-nm nanostructured MoO3 layer was deposited at a deposition rate of 0.5 Å/s, the most efficient TIOPV device had an even greater PCE, a factor of 7.5 times higher at 3.53%.

scholarly journals Improvement of short circuit current of mono crystalline silicon solar cells

2013 ◽  
Vol 16 (1) ◽  
pp. 48-56
Author(s):  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
Lan Truong ◽  
Khoa Thanh Nhat Phan ◽  
Chien Mau Dang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Front Surface ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Antireflection Coatings

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

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