Growth of b-Axis-Oriented BaTi2O5 Nanopillars by Laser Chemical Vapor Deposition

2012 ◽  
Vol 508 ◽  
pp. 185-188 ◽  
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystal Substrate ◽  
Laser Chemical Vapor Deposition ◽  
Crystal Substrate ◽  
Nanopillar Arrays

B-Axis-Oriented Bati2o5 Nanopillars Were Prepared on (100) Mgo Single Crystal Substrate by Laser Chemical Vapor Deposition Using Ba and Ti Dipivaloylmethanate Precursors. B-Axis-Oriented Bati2o5 Nanopillars Were Approximately 250–400 Nm in Width and 2.5 μm in Height. Deposition Rate of Bati2o5 Nanopillar Arrays Was about 75 μm H−1.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

(110)-oriented Bi–Sr–Ca–Cu–O superconducting thin films prepared by metalorganic chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 978-984 ◽  
Author(s):  
Nobuhiko Kubota ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thick Film ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Zero Resistance ◽  
Metalorganic Chemical

We have studied the superconducting Bi–Sr–Ca–Cu–O thin films prepared by metalorganic chemical vapor deposition (MOCVD). The thin films fabricated on an MgO(110) single crystal substrate show a preferential (110) orientation. The fabrication of (110)-oriented film was dependent on the chemical composition and the existence of a Sr–Ca–Cu–O buffer layer. The zero resistance temperature (Tc0) was obtained at 60 K for the 1 μm thick film and 23 K for the 300 nm thick film. The critical current density (Jc) of this film at 4.2 K was about 1 × 104 A/cm2 for the film of 1 μm thickness.

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1855-1862 ◽  
Author(s):  
H. Kahn ◽  
R. Ballarini ◽  
A. H. Heuer
Keyword(s):  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystal Substrate ◽  
Pressure Chemical ◽  
Polysilicon Films

Polysilicon films were deposited using low-pressure chemical vapor deposition (LPCVD) onto oxidized silicon substrates, after which substrate curvature as a function of temperature was measured. The curvatures changed with temperature, implying that the thermal expansion of LPCVD polysilicon differs from that of the single crystal silicon substrate. Further, polysilicon films with tensile residual stresses displayed an increased thermal expansion, while polysilicon films with compressive residual stresses displayed a decreased thermal expansion. Following high temperature annealing, the residual stresses of the polysilicon films were reduced to near zero, and the thermal expansion of the polysilicon films matched that of the single crystal substrate. The apparent change in thermal expansion coefficient due to residual stress was much larger than predicted theoretically.

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