GIAXD and XPS Characterization of sp3C Doped SiC Superhard Nanocomposite Film

2012 ◽  
Vol 512-515 ◽  
pp. 971-974
Author(s):  
Jian Yi ◽  
Xiao Dong He ◽  
Yue Sun ◽  
Zhi Peng Xie ◽  
Wei Jiang Xue ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Grazing Incidence ◽  
Nanocomposite Films ◽  
Second Phase ◽  
X Ray ◽  
Xps Characterization ◽  
Ss Substrates ◽  
Sic Film

The sp3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The sp3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the sp3 doped SiC nanocomposite films were not perfect crystalline, which was composed with fine SiC nanocrystals, and a second phase very similar with diamond like carbon (DLC). XPS analysis showed that the excess C existing in films and turned from diamond into DLC from the surface to inner of film.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

XPS Characterization of Mixed Carbides Obtained from Polymer Precursors

1990 ◽  
Vol 180 ◽  
Author(s):  
Gaetano Granozzi ◽  
Antonella Glisenti ◽  
Gian D. Soraru
Keyword(s):  
Photoelectron Spectroscopy ◽  
Structural Evolution ◽  
Metal Alkoxides ◽  
Pyrolysis Process ◽  
X Ray ◽  
Polymer Precursors ◽  
Xps Characterization

ABSTRACTPolymer precursors for Si-C, Si-Ti-C-O and Si-Al-C-O systems have been obtained from polycarbosilane and the corresponding metal alkoxides. X-ray Photoelectron Spectroscopy (XPS) has been used to follow the structural evolution of these preceramic compounds during the pyrolysis process.

Characterization of Ge1-x-ySixSny Ternary Alloy Surfaces and Ni/Ge1-x-ySixSny Bilayer Reactions by X-Ray Techniques

2015 ◽  
Vol 1770 ◽  
pp. 19-24 ◽  
Author(s):  
Gordon J. Grzybowski ◽  
Arnold Kiefer ◽  
Bruce Claflin
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Shifts ◽  
Surface Oxidation ◽  
Device Fabrication ◽  
Ternary Alloys ◽  
Ambient Conditions ◽  
X Ray ◽  
Wide Range ◽  
Xps Characterization

ABSTRACTInterest in next generation devices that integrate photonic and electronic functionality is focused on extending the capability of existing group IV material systems while maintaining compatibility with existing processing methods and procedures. One such class of materials which has been recently developed, Ge1-x-ySixSny ternary alloys, is being investigated for integrated Si photonics, solar cell materials, telecommunication applications, and for IR photodetectors. These alloys afford the opportunity to decouple the band gap energies and lattice constants over a wide range of values, potentially yielding direct and indirect character that can be coupled with a variety of different substrates dependent on composition.In the present work, we report X-ray photoelectron spectroscopy (XPS) characterization of Ge1-x-ySixSny alloys grown by gas-source molecular beam epitaxy (GS-MBE) and investigate Ni- Ge1-x-ySiySny bilayer reactions with x-ray diffraction (XRD). The surface oxidation of samples stored in ambient conditions were measured with XPS. High resolution spectra showed chemical shifts of Ge, Si and Sn peaks consistent with Ge-O, Si-O and Sn-O bond formation. Depth profiling indicates a homogeneous composition throughout the bulk of the sample with surface oxidation confined to the top few nanometers. A highly tin-enriched layer was indicated at the surface of the material, while silicon was observed to be either enriched or depleted at the surface depending on the sample.To study the interaction of the ternary with an ohmic contact commonly used in device fabrication processes today, nickel layers 30 nm thick were evaporated onto the alloys and were annealed in nitrogen up to 400 °C for periods as long as 1 hour. The XRD data show that the Ni2(Ge1-x-ySixSny) phase forms first followed by Ni(Ge1-x-ySixSny).

scholarly journals Crystallization dynamics and interface stability of strontium titanate thin films on silicon

2015 ◽  
Vol 48 (2) ◽  
pp. 393-400 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Hanzig ◽  
Erik Mehner ◽  
Carsten Richter ◽  
Jozef Veselý ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Grazing Incidence ◽  
Atmospheric Conditions ◽  
X Ray Diffraction ◽  
Heating Rates ◽  
X Ray ◽  
Crystallization Dynamics

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO3layers is investigated byin situgrazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO3is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

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