XPS Characterization of Mixed Carbides Obtained from Polymer Precursors

1990 ◽  
Vol 180 ◽  
Author(s):  
Gaetano Granozzi ◽  
Antonella Glisenti ◽  
Gian D. Soraru

ABSTRACTPolymer precursors for Si-C, Si-Ti-C-O and Si-Al-C-O systems have been obtained from polycarbosilane and the corresponding metal alkoxides. X-ray Photoelectron Spectroscopy (XPS) has been used to follow the structural evolution of these preceramic compounds during the pyrolysis process.

2012 ◽  
Vol 512-515 ◽  
pp. 971-974
Author(s):  
Jian Yi ◽  
Xiao Dong He ◽  
Yue Sun ◽  
Zhi Peng Xie ◽  
Wei Jiang Xue ◽  
...  

The sp3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The sp3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the sp3 doped SiC nanocomposite films were not perfect crystalline, which was composed with fine SiC nanocrystals, and a second phase very similar with diamond like carbon (DLC). XPS analysis showed that the excess C existing in films and turned from diamond into DLC from the surface to inner of film.


2015 ◽  
Vol 1770 ◽  
pp. 19-24 ◽  
Author(s):  
Gordon J. Grzybowski ◽  
Arnold Kiefer ◽  
Bruce Claflin

ABSTRACTInterest in next generation devices that integrate photonic and electronic functionality is focused on extending the capability of existing group IV material systems while maintaining compatibility with existing processing methods and procedures. One such class of materials which has been recently developed, Ge1-x-ySixSny ternary alloys, is being investigated for integrated Si photonics, solar cell materials, telecommunication applications, and for IR photodetectors. These alloys afford the opportunity to decouple the band gap energies and lattice constants over a wide range of values, potentially yielding direct and indirect character that can be coupled with a variety of different substrates dependent on composition.In the present work, we report X-ray photoelectron spectroscopy (XPS) characterization of Ge1-x-ySixSny alloys grown by gas-source molecular beam epitaxy (GS-MBE) and investigate Ni- Ge1-x-ySiySny bilayer reactions with x-ray diffraction (XRD). The surface oxidation of samples stored in ambient conditions were measured with XPS. High resolution spectra showed chemical shifts of Ge, Si and Sn peaks consistent with Ge-O, Si-O and Sn-O bond formation. Depth profiling indicates a homogeneous composition throughout the bulk of the sample with surface oxidation confined to the top few nanometers. A highly tin-enriched layer was indicated at the surface of the material, while silicon was observed to be either enriched or depleted at the surface depending on the sample.To study the interaction of the ternary with an ohmic contact commonly used in device fabrication processes today, nickel layers 30 nm thick were evaporated onto the alloys and were annealed in nitrogen up to 400 °C for periods as long as 1 hour. The XRD data show that the Ni2(Ge1-x-ySixSny) phase forms first followed by Ni(Ge1-x-ySixSny).


1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


2011 ◽  
Vol 415-417 ◽  
pp. 642-647
Author(s):  
En Zhong Li ◽  
Da Xiang Yang ◽  
Wei Ling Guo ◽  
Hai Dou Wang ◽  
Bin Shi Xu

Ultrafine fibers were electrospun from polyacrylonitrile (PAN)/N,N-dimethyl formamide (DMF) solution as a precursor of carbon nanofibers. The effects of solution concentration, applied voltage and flow rate on preparation and morphologies of electrospun PAN fibers were investigated. Morphologies of the green fibers, stabilized fibers and carbonized fibers were compared by scanning electron microscope (SEM). The diameter of PAN nanofibers is about 450nm and the distribution of diameter is well-proportioned. Characterization of the elements changes of fibers were performed by X-ray photoelectron spectroscopy (XPS).


2011 ◽  
Vol 115 (21) ◽  
pp. 10727-10735 ◽  
Author(s):  
V. M. Gun’ko ◽  
S. T. Meikle ◽  
O. P. Kozynchenko ◽  
S. R. Tennison ◽  
F. Ehrburger-Dolle ◽  
...  

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