Characterization of Photoluminescence and Surface Chemistry after Annealing about Si:SiO2 Films Fabricated by Radio Frequency Sputtering

We fabricated Si:SiO2 films and assessed its characterization of photoluminescence and surface chemistry. When Si tablets on a SiO2 target were sputtered in a chamber of a radio frequency sputtering device, Si:SiO2 films were deposited on a substrate. When the films were excited by a He-Cd laser, photoluminescence having wide and continuous peaks was emitted in shorter region than 600 nm. After annealing, intensity of photoluminescence changed, which depends on annealing temperature and time. By the Fourier Transform InfraRed Spectroscopy, bonds of atoms around Si were investigated.