Magneto-Transport Properties in LaMnO3 Thin Films on a-SiO2 Substrates Produced by Metal Organic Decomposition Method

We have studied the magneto-transport properties in LMO thin films on a-SiO2 substrates produced by the metal organic decomposition (MOD) method. LMO thin films have been prepared by the MOD method in the 100 % O2 gas atmosphere on different heat treatment conditions. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2 gas atmosphere by use of the MOD method shows the ferromagnetic metal properties for suitable heat treatment conditions. We consider that the excess of O2- ions in LMO thin films produced in the 100 % O2 gas atmosphere induces the strong hole self-doping into those and changes to ferromagnetic metal. The quantity of excess O2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. We have obtained the coercive forces from the magnetic field dependence of magnetoresistance. Based on the temperature dependence of the coercive forces, we have estimated the Curie temperature of LMO thin films.

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Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.962.17 ◽

2019 ◽

Vol 962 ◽

pp. 17-21 ◽

Cited By ~ 1

Author(s):

Hiromi Kobori ◽

Tohru Kitamura ◽

Toshifumi Taniguchi ◽

Tetsuo Shimizu

Keyword(s):

Thin Film ◽

Thin Films ◽

Heat Treatment ◽

Single Crystal ◽

Decomposition Method ◽

Treatment Conditions ◽

Gas Atmosphere ◽

Metal Organic ◽

Temperature Time ◽

Organic Decomposition

We have studied the strong hole self-doping into LaMnO3(LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2gas atmosphere. We consider that the excess of O2-ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2-ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.505 ◽

2007 ◽

Vol 336-338 ◽

pp. 505-508

Author(s):

Cheol Jin Kim ◽

In Sup Ahn ◽

Kwon Koo Cho ◽

Sung Gap Lee ◽

Jun Ki Chung

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Grain Size ◽

Sol Gel ◽

Surface Oxidation ◽

Cold Isostatic Pressing ◽

Tube Furnace ◽

Treatment Conditions ◽

Average Grain Size ◽

Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

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Morphology-dependent spin Seebeck effect in yttrium iron garnet thin films prepared by metal-organic decomposition

Ceramics International ◽

10.1016/j.ceramint.2021.02.249 ◽

2021 ◽

Author(s):

Trinh Nguyen Thi ◽

Phuoc Cao Van ◽

Duc Duong Viet ◽

Viet Dong Quoc ◽

Hayeong Ahn ◽

...

Keyword(s):

Thin Films ◽

Yttrium Iron Garnet ◽

Seebeck Effect ◽

Yttrium Iron ◽

Spin Seebeck Effect ◽

Metal Organic ◽

Iron Garnet ◽

Organic Decomposition

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High DC sensitivity of VOxbolometer thin films on Si3N4/SiO2membranes fabricated by metal–organic decomposition

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.068009 ◽

2014 ◽

Vol 53 (6) ◽

pp. 068009 ◽

Cited By ~ 17

Author(s):

Takashi Uchida ◽

Akihito Matsushita ◽

Takashi Tachiki

Keyword(s):

Thin Films ◽

Metal Organic ◽

Organic Decomposition

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Effects of vicinal substrates on the orientation of Bi2Sr2CaCu2O8+x thin films when the metal-organic decomposition method is used

Journal of Physics Conference Series ◽

10.1088/1742-6596/1293/1/012012 ◽

2019 ◽

Vol 1293 ◽

pp. 012012 ◽

Cited By ~ 1

Author(s):

Y Yamada ◽

T Okamoto

Keyword(s):

Thin Films ◽

Decomposition Method ◽

Metal Organic ◽

Organic Decomposition

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Atmospheric pressure synthesis of In2Se3, Cu2Se, and CuInSe2 without external selenization from solution precursors

Journal of Materials Research ◽

10.1557/jmr.2009.0155 ◽

2009 ◽

Vol 24 (4) ◽

pp. 1375-1387 ◽

Cited By ~ 6

Author(s):

Jennifer A. Nekuda Malik ◽

Maikel F.A.M. van Hest ◽

Alexander Miedaner ◽

Calvin J. Curtis ◽

Jennifer E. Leisch ◽

...

Keyword(s):

Thin Films ◽

Atmospheric Pressure ◽

Phase Evolution ◽

Significant Degree ◽

Metal Organic ◽

Pressure Synthesis ◽

Atmospheric Pressure Synthesis ◽

Composition Changes ◽

Specific Phase ◽

Organic Decomposition

In2Se3, Cu2Se, and CuInSe2 thin films have been successfully fabricated using novel metal organic decomposition (MOD) precursors and atmospheric pressure-based deposition and processing. The phase evolution of the binary (In-Se and Cu-Se) and ternary (Cu-In-Se) MOD precursor films was examined during processing to evaluate the nature of the phase and composition changes. The In-Se binary precursor exhibits two specific phase regimes: (i) a cubic-InxSey phase at processing temperatures between 300 and 400 °C and (ii) the γ-In2Se3 phase for films annealed above 450 °C. Both phases exhibit a composition of 40 at.% indium and 60 at.% selenium. The binary Cu-Se precursor films show more diverse phase behavior, and within a narrow temperature processing range a number of Cu-Se phases, including CuSe2, CuSe, and Cu2Se, can be produced and stabilized. The ternary Cu-In-Se precursor can be used to produce relatively dense CuInSe2 films at temperatures between 300 and 500 °C. Layering the binary precursors together has provided an approach to producing CuInSe2 thin films; however, the morphology of the layered binary structure exhibits a significant degree of porosity. An alternative method of layering was explored where the Cu-Se binary was layered on top of an existing indium-gallium-selenide layer and processed. This method produced highly dense and large-grained (>3 µm) CuInSe2 thin films. This has significant potential as a manufacturable route to CIGS-based solar cells.

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