BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
Keyword(s):
We propose the Si-Vapor Etching (Si-VE), which is thermal chemical etching process, as epi-ready treatment for Silicon Carbide (SiC). In this work, we report the evaluation results of BPD-TED conversion by Si-VE treatment using repeated KOH etching process. This method makes it possible to observe BPD-TED conversion in a very shallow surface region of the SiC substrate. 80% of BPDs is converted to TEDs with a depth of more than 80nm under optimized Si-VE 2000°C conditions. Furthermore, 53% of BPDs were converted to TEDs with 140nm or more depth, which has been confirmed under optimized 1800°C Si-VE conditions.
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2010 ◽
Vol 645-648
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pp. 1097-1100
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2000 ◽
Vol 9
(3-6)
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pp. 480-482
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1990 ◽
Vol 38
(11)
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pp. 2149-2159
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2012 ◽
Vol 50
(2)
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pp. 220-225
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