Threshold Voltage Instability and Charge Retention in Nonvolatile Memory Cell with Nitride/Oxide Double-Layered Inter-poly Dielectric

29th International Reliability Physics Symposium ◽

10.1109/irps.1991.363230 ◽

1991 ◽

Author(s):

Seiichi Moon ◽

Eiji Sakagami ◽

Yukio Kaneko ◽

Yoichi Ohshima ◽

Norihisa Arai ◽

...

Keyword(s):

Threshold Voltage ◽

Nonvolatile Memory ◽

Memory Cell ◽

Charge Retention ◽

Voltage Instability ◽

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Threshold voltage instability and charge retention in nonvolatile memory cell with nitride/oxide double-layered inter-poly dielectric

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146010 ◽

2002 ◽

Author(s):

S. Mori ◽

E. Sakagami ◽

Y. Kaneko ◽

Y. Ohshima ◽

N. Arai ◽

...

Keyword(s):

Threshold Voltage ◽

Nonvolatile Memory ◽

Memory Cell ◽

Charge Retention ◽

Voltage Instability ◽

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An highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283481 ◽

2004 ◽

Author(s):

Tsz Yin Man ◽

Mansun Chan

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

Charge Storage ◽

Oxide Charge ◽

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Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO2 Stacked Layers for Analog Memory Application

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1016.1065 ◽

2021 ◽

Vol 1016 ◽

pp. 1065-1070

Author(s):

Shun Ichiro Ohmi ◽

Jooyoung Pyo

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Nonvolatile Memory ◽

Voltage Control ◽

Analog Memory ◽

High K ◽

Multi Level ◽

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.

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Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1441 ◽

1999 ◽

Vol 38 (Part 1, No. 3A) ◽

pp. 1441-1447 ◽

Author(s):

Hiroshi Aozasa ◽

Ichiro Fujiwara ◽

Akihiro Nakamura ◽

Yasutoshi Komatsu

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Carrier Traps ◽

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Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Microelectronics Reliability ◽

10.1016/j.microrel.2011.10.014 ◽

2012 ◽

Vol 52 (8) ◽

pp. 1627-1631 ◽

Author(s):

Jer-Chyi Wang ◽

Chih-Ting Lin ◽

Chi-Hsien Huang ◽

Chao-Sung Lai ◽

Chin-Hsiang Liao

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

Charge Storage ◽

Data Retention ◽

Retention Characteristics

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The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

2010 IEEE International Memory Workshop ◽

10.1109/imw.2010.5488383 ◽

2010 ◽

Author(s):

Sharon Cui ◽

Dongseog Eun ◽

Bozidar Marinkovic ◽

Cheng-Yi Peng ◽

Xiao Pan ◽

...

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

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Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Applied Physics Letters ◽

10.1063/5.0055530 ◽

2021 ◽

Vol 119 (6) ◽

pp. 063501

Author(s):

Xin Chen ◽

Yaozong Zhong ◽

Yu Zhou ◽

Shuai Su ◽

Shumeng Yan ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Voltage Instability

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Bias stress induced threshold voltage instability in solution processed organic thin film transistor

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021646 ◽

2014 ◽

Author(s):

Yin Sun ◽

Lining Zhang ◽

Zubair Ahmed ◽

Dipu Kabir ◽

Mansun Chan

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Solution Processed ◽

Bias Stress ◽

Voltage Instability

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Threshold voltage instability and plasma induced damage of polySi/HfO/sub 2/ devices - positive impact of deuterium incorporation

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) ◽

10.1109/icicdt.2004.1309957 ◽

2004 ◽

Author(s):

H.-H. Tseng ◽

M.E. Ramon ◽

L. Hebert ◽

P.J. Tobin ◽

D. Triyoso ◽

...

Keyword(s):

Threshold Voltage ◽

Positive Impact ◽

Deuterium Incorporation ◽

Voltage Instability

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Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2875094 ◽

2019 ◽

Vol 66 (1) ◽

pp. 539-545 ◽

Author(s):

Xiangyu Yang ◽

Bongmook Lee ◽

Veena Misra

Keyword(s):

Threshold Voltage ◽

Voltage Instability ◽

Anneal Temperature

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