Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Film Capacitors Made by RF Magnetron Sputtering and Heat-Treated by the Bottom Electrode Crystallization Method

The bottom electrode crystallization (BEC) method was applied to the crystallization of Pb(Zr,Ti)O3 (PZT) thin films deposited by RF magnetron sputtering on Pt/Ti/SiO2/Si substrates. Using a proportional-integral-differential controller, the current flowing in the Pt/Ti films provided accurately controlled Joule heating for the crystallization of the PZT films. The temperature uniformity of the heat treatments was investigated by measuring the ferroelectric properties of PZT. Platinum and tungsten wires were alternatively used as electrical contacts. Scanning electron microscopy (SEM) images were used to inspect the electrical contact regions between the platinum films and different contact wires. The PZT films showed higher remanent polarizations and lower leakage currents near the electrical contacts when Pt wires were used; the ferroelectric properties were more uniform on the PZT films heat-treated with W contact wires. The BEC method can successfully replace the more conventional means for thin film crystallization, having the advantage of being a very precise, low cost and low power consumption technique.

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The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method

Journal of Materials Research ◽

10.1557/jmr.1998.0468 ◽

1998 ◽

Vol 13 (12) ◽

pp. 3442-3448 ◽

Cited By ~ 3

Author(s):

Dong Joo Kim ◽

Tae Song Kim ◽

Jeon Kook Lee ◽

Hyung Jin Jung

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Lead Zirconate Titanate ◽

Rf Magnetron Sputtering ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Pzt Films ◽

Grain Distribution

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

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Investigation of Optical, Structural and Electrical Properties of Heterostructure Fe2O3 Deposited by RF Magnetron Sputtering on ZnO Layer by Spray Pyrolysis

10.21203/rs.3.rs-226703/v1 ◽

2021 ◽

Author(s):

Sevda Sarıtaş ◽

Tuba Çakıcı ◽

Günay Merhan Muğlu ◽

Muhammet Yıldırım

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Spray Pyrolysis ◽

Spherical Shape ◽

Rf Magnetron Sputtering ◽

Band Gap Energy ◽

Sem Images ◽

X Ray ◽

Hall Measurements ◽

Structural And Electrical Properties

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.

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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.25La0.75Ti3O12 THIN FILM DEPOSITED BY RF MAGNETRON SPUTTERING

Integrated Ferroelectrics ◽

10.1080/10584580701755930 ◽

2007 ◽

Vol 94 (1) ◽

pp. 37-46 ◽

Cited By ~ 1

Author(s):

YUNYI WU ◽

JUN YU ◽

DUANMING ZHANG ◽

CHAODAN ZHENG ◽

YUNBO WANG

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Ferroelectric Properties ◽

Rf Magnetron Sputtering

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Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.434-435.296 ◽

2010 ◽

Vol 434-435 ◽

pp. 296-299

Author(s):

Jian Ping Yang ◽

Xing Ao Li ◽

An You Zuo ◽

Zuo Bin Yuan ◽

Zhu Lin Weng

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Rf Magnetron Sputtering ◽

Growth Behavior ◽

Ferroelectric Thin Films ◽

Si Substrates ◽

Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

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