scholarly journals Investigation of Optical, Structural and Electrical Properties of Heterostructure Fe2O3 Deposited by RF Magnetron Sputtering on ZnO Layer by Spray Pyrolysis

2021 ◽  
Author(s):  
Sevda Sarıtaş ◽  
Tuba Çakıcı ◽  
Günay Merhan Muğlu ◽  
Muhammet Yıldırım
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Spray Pyrolysis ◽  
Spherical Shape ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Sem Images ◽  
X Ray ◽  
Hall Measurements ◽  
Structural And Electrical Properties

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.

Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Film Capacitors Made by RF Magnetron Sputtering and Heat-Treated by the Bottom Electrode Crystallization Method

2006 ◽  
Vol 514-516 ◽  
pp. 1348-1352
Author(s):  
Andréi I. Mardare ◽  
Cezarina C. Mardare ◽  
Raluca Savu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Rf Magnetron Sputtering ◽  
Electrical Contacts ◽  
Sem Images ◽  
Heat Treated ◽  
Pzt Films

The bottom electrode crystallization (BEC) method was applied to the crystallization of Pb(Zr,Ti)O3 (PZT) thin films deposited by RF magnetron sputtering on Pt/Ti/SiO2/Si substrates. Using a proportional-integral-differential controller, the current flowing in the Pt/Ti films provided accurately controlled Joule heating for the crystallization of the PZT films. The temperature uniformity of the heat treatments was investigated by measuring the ferroelectric properties of PZT. Platinum and tungsten wires were alternatively used as electrical contacts. Scanning electron microscopy (SEM) images were used to inspect the electrical contact regions between the platinum films and different contact wires. The PZT films showed higher remanent polarizations and lower leakage currents near the electrical contacts when Pt wires were used; the ferroelectric properties were more uniform on the PZT films heat-treated with W contact wires. The BEC method can successfully replace the more conventional means for thin film crystallization, having the advantage of being a very precise, low cost and low power consumption technique.

Study on the Preparation and Corrosion Resistance of Nano-Structured SiO2 Thin Film on Carbon Steel

2011 ◽  
Vol 183-185 ◽  
pp. 1722-1725 ◽  
Author(s):  
Jing Lin ◽  
Tie Feng Zhang ◽  
Gui Wen Yu
Keyword(s):  
Thin Film ◽  
Corrosion Resistance ◽  
Carbon Steel ◽  
Magnetron Sputtering ◽  
Photoelectron Spectrum ◽  
Sea Water ◽  
Rf Magnetron Sputtering ◽  
Corrosion Resistant ◽  
X Ray ◽  
Atomic Force

Used RF magnetron sputtering method to prepare SiO2thin film on the carbon steel (Q235A) substrate, Films were characterized with the atomic force microscope (AFM) and the X-ray photoelectron spectrum (XPS). Corrosion resistance was compared of SiO2/ Q235A and Q235A. The results showed that: nano-structured thin film was smooth and dense, The thin film was constituted by compact particles of SiO2, and there was no Fe in the films. Electrochemical experiments indicated that SiO2/ Q235A had better corrosion resistant than Q235A in the sea water.

Deposition of ZnS films by RF magnetron sputtering: Structural and optical properties using Z-scan technique

2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Film Structure ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
Xrd Patterns ◽  
Zns Films

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.

UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method

2013 ◽  
Vol 771 ◽  
pp. 67-70
Author(s):  
Jun Dai ◽  
Yi Jie Fan ◽  
Qiang Sun
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
X Ray ◽  
Indium Gallium

Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO2/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 103. When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.

Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applications

2014 ◽  
Vol 28 (16) ◽  
pp. 1450134 ◽  
Author(s):  
Bo He ◽  
Jing Xu ◽  
Hong Zhi Wang ◽  
Yao Gang Li ◽  
Huai Zhong Xing ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Tin Sulfide ◽  
Copper Zinc Tin Sulfide ◽  
X Ray ◽  
Copper Zinc ◽  
Cu2znsns4 Thin Film

In this paper, copper-zinc-tin-sulfide ( Cu 2 ZnSnS 4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu 2 ZnSnS 4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO / Cu 2 ZnSnS 4 heterojunction. Under reverse bias, high photocurrent is obtained.

Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering

2019 ◽  
Vol 87 (1) ◽  
pp. 10302
Author(s):  
Volkan Şenay ◽  
Soner Özen
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Impedance Spectrum ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Ion Diffusion ◽  
A Value ◽  
Average Transmittance ◽  
Ito Glass

A Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s1/2 provides easy Li-ion diffusion.

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