Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode

In this work ion-implanted p+/n diodes have been used as minimum ionizing particle (MIP) detectors. The diode structure is based on a 0.45 $m deep, NA = 4×1019 cm-3 doped p+ anode, ion implanted in an n-type epilayer with thickness equal to 55 $m and nominal donor doping ND = 2×1014 cm-3. The diode breakdown voltages were above 1000V. At 1000V reverse bias the diode leakage current was of the order of 1 nA. The punch through depletion voltage was nearing the range 220-250 V. The charge collection efficiency to minimum ionizing particle was investigated by a 90Sr β source. The pulse height spectrum was measured as a function of the reverse voltage in the range 0-605 V. At each bias point the signal was stable and reproducible, showing the absence of polarization effects. At 220 V the collected charge was 2970 e- and saturated at 3150 e- near 350 V. At the moment, this is the highest collected charge for SiC detectors. At bias voltages over 100V the spectrum was found to consist of two peaks clearly separated. Around 250 V the signal saturates, in agreement with CV results.

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ELECTRICAL PROPERTIES OF CVD DIAMOND DETECTOR AND DETECTION FOR ALPHA PARTICLE

Modern Physics Letters A ◽

10.1142/s0217732305018591 ◽

2005 ◽

Vol 20 (38) ◽

pp. 2949-2956

Author(s):

QINGFENG SU ◽

YIBEN XIA ◽

LINJUN WANG ◽

JIANMIN LIU ◽

JIANFENG RUAN ◽

...

Keyword(s):

Alpha Particle ◽

Collection Efficiency ◽

Pulse Height ◽

Radiation Detectors ◽

Cvd Diamond ◽

Pulse Height Spectrum ◽

Average Charge ◽

Diamond Detector ◽

Charge Collection Efficiency ◽

Cvd Diamond Detector

The outstanding properties of diamond make it an ideal material for radiation detectors especially in the high temperature, high radiation and corrosion environments. For this purpose, electrical and irradiation properties of high quality CVD diamond detector were investigated at room temperature under irradiation conditions. For freestanding diamond films, dark current was in the order of 10-10 A and photocurrent was in the order of 10-8 A by 5.9 keV X-ray irradiation from a 55 Fe source with the applied voltage of 40 V. Pulse height spectrum acquired using a 241 Am alpha particle source show a full-energy peak at 820 channel which corresponded to an average charge collection efficiency of approximately 40.5%. However, a good signal-to-noise ratio and an energy resolution of 1.33% for alpha particles detecting were also obtained.

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Study of Background Pulse Spectrum of an LSC System

Radiocarbon ◽

10.1017/s0033822200011899 ◽

1989 ◽

Vol 31 (03) ◽

pp. 342-351 ◽

Cited By ~ 2

Author(s):

Sigurđur A Einarsson ◽

Páll Theodórsson

Keyword(s):

Counting Rate ◽

Liquid Scintillation ◽

Collection Efficiency ◽

Pulse Height ◽

Pulse Height Spectrum ◽

Light Collection ◽

Background Counting Rate ◽

Proportional Counters ◽

Background Counting ◽

Made In

Important advances have been made in reducing the background counting rate of gas proportional counters for14C dating through detailed and systematic study of the background components. Until recently, limited work has been reported on the study of the background of liquid scintillation counters (LSC). During the last few years, commercial systems with greatly reduced background have been introduced. It is shown that the best gas proportional counters and LSC have similar backgrounds for the same amount of sample material. Similar results with less effort may be expected with more detailed and fundamental knowledge of the components of the background of LSC. We report the results of a study of one photomultiplier LSC system where we research all parameters of importance: light collection efficiency, absorbed energy per photo-electron, pulse height spectrum and background counting rate.

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Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.1021 ◽

2005 ◽

Vol 483-485 ◽

pp. 1021-1024 ◽

Cited By ~ 8

Author(s):

Francesco Moscatelli ◽

Andrea Scorzoni ◽

Antonella Poggi ◽

Mara Bruzzi ◽

Stefano Lagomarsino ◽

...

Keyword(s):

Silicon Carbide ◽

Particle Physics ◽

Collection Efficiency ◽

Good Alternative ◽

Beta Particle ◽

Charge Collection ◽

Reverse Voltage ◽

Particle Radiation ◽

Charge Collection Efficiency ◽

Physics Experiments

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region.

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Ion beam analysis of single crystal CVD diamond

MRS Proceedings ◽

10.1557/proc-0908-oo05-20 ◽

2005 ◽

Vol 908 ◽

Author(s):

Claudio Manfredotti ◽

Alessandro Lo GIudice ◽

Stiepko Medunic ◽

Milko Jaksic ◽

Elisabetta Colombo

Keyword(s):

Single Crystal ◽

Energy Resolution ◽

Collection Efficiency ◽

Ion Beam ◽

Cvd Diamond ◽

Polycrystalline Materials ◽

Beam Diameter ◽

Spatial Homogeneity ◽

Charge Collection Efficiency ◽

Polarization Effects

AbstractIBIC ( Ion Beam Induced Charge ) represents a powerful method to investigate the homogeneity of the response of semiconductor nuclear detectors from the point of view of charge collection efficiency ( cce ) with a spatial resolution of few microns. Polycrystalline materials like CVD diamond displayed in the past non-uniform cce maps, in which it was easy to notice the appearance of single grains. Moreover, the presence of traps in the defective regions around the grain boundaries caused strong polarization effects which in practice impeded in many cases to get reasonable cce maps. With the availability of new homoepitaxially grown CVD diamond samples the situation is now very much improved : maps are very uniform and the non-homogeneous broadening of peaks with the consequent worsening of energy resolution is extremely reduced.In this paper, both proton and alpha microbeams of energies 3 and 4.5 MeV were used for the investigation of single crystal CVD homoepitaxial diamond, with a beam diameter spot of about 1.2 mm over scanned areas of more than 1 mm2, sampled in regions of interest from 450 um × 450 um down to 150 um × 150 um and below. The good spatial homogeneity together with a cce value of about 50 % made it possible to reach energy resolutions of 1.3 % FWHM, including a not negligible electrical noise. These values compare quite well with Si performances, which in the same conditions reached 0.85% FWHM. The stability and reproducibility of the detector was very good without any preliminary priming and polarization effects were reduced to a minimum. The detector was pushed in some cases up to 700 cps with apparently no cce losses and with only a slight worsening of energy resolution.

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4H-SiC High Temperature Spectrometers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.941 ◽

2007 ◽

Vol 556-557 ◽

pp. 941-944 ◽

Cited By ~ 3

Author(s):

Evgenia V. Kalinina ◽

Nikita B. Strokan ◽

Alexander M. Ivanov ◽

A. Sadohin ◽

A. Azarov ◽

...

Keyword(s):

High Temperature ◽

Collection Efficiency ◽

High Dose ◽

Cross Sectional ◽

Charge Collection Efficiency ◽

Rutherford Back Scattering ◽

Before And After ◽

Temperature Activation ◽

Activation Annealing ◽

Ion Implanted

The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of Rutherford back scattering/channeling spectrometry and cross-sectional transmission electron microscopy. The detector structures fabricated on this thin ion implanted p+-n junctions operated in the temperature range of 16-170 oC with reproducible stable spectrometric characteristics. The charge collection efficiency and the energy resolution of detectors improved with rising temperature up to 170 oC, that was obtained in SiC detectors for the first time.

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