Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

2007 ◽  
Vol 556-557 ◽  
pp. 643-646 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Kuan Yew Cheong ◽  
Da Il Eom ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors

We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment

2002 ◽  
Vol 80 (24) ◽  
pp. 4552-4554 ◽  
Author(s):  
Akira Asano ◽  
Asuha ◽  
Osamu Maida ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

scholarly journals Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3443
Author(s):  
Jinyu Lu ◽  
Gang He ◽  
Jin Yan ◽  
Zhenxiang Dai ◽  
Ganhong Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Layer Deposition

In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 720
Author(s):  
He Guan ◽  
Shaoxi Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Schottky Emission ◽  
Oxide Semiconductor ◽  
Optimized Design ◽  
Mos Capacitors ◽  
Leakage Mechanism ◽  
High K

Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler–Nordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO2 (4 m)/Al2O3 (8 nm) laminated dielectric shows a high barrier height ϕB of 1.66 eV at 30 °C which was extracted from the Schottky emission mechanism, and this can be explained by fewer In–O and As–O states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO2 (4 m)/Al2O3 (8 nm)/n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 × 10−7 A/cm2 from −3 to 0 V at 30 °C. It is demonstrated that the HfO2/Al2O3 laminated dielectric with a thicker Al2O3 film of 8 nm is an optimized design to be the high-k dielectric used in Au-Pt-Ti/HfO2-Al2O3/InAlAs MOS capacitor applications.

Electrical Properties of Thermally Grown SiO2-SiC Interfaces

1992 ◽  
Vol 242 ◽  
Author(s):  
Nitya N. Singh ◽  
A. Rys ◽  
A. U. Ahmed
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Mos Capacitors ◽  
Time Constants ◽  
Fixed Charges ◽  
Emission Time ◽  
Thermally Grown

ABSTRACTFabrication processes of metal-oxide semiconductor (MOS) capacitors on n-type, Si-face, 6H-SiC were studied. The effects of thermal oxidation conditions at temperatures between 1100 and 1250°C on the electrical properties of MOS capacitors were determined. The wafers were annealed under argon to improve the C-V characteristics. C-V characteristics of AI-SiO2-SiC metal-oxide-semiconductor were measured at high frequency in the dark and under illumination. In the dark inversion does not occur, probably owing to the absence of minority carriers due to the large band gap of 6H-SiC. The accumulation, depletion, and inversion regions were clearly observed when the C-V measurements were made under illumination for both wet and dry thermally grown oxides. The interface trap densities and emission time constants of fast states were determined by ac conductance measurements. From the analysis of data we obtained a total of Fixed charges and the slow interface traps, Nf + NssSlow of 1.5 to 3.3 × 1012 cm-2, fast interface trap densities, NssFast of 0.5 to 1.7 × 1011 cm-2 eV-1 and emission times constant of 0.3 to 1.4 μsec for wet oxidation. For dry oxidation, Nf + N, ssSlow of 3.5 to 11.2 × 10cm-2, NssFast of 0.7 to 1.25 × 1010 cm-2 eV-1 and emission time constants of 0.6 to 2 μsec were obtained.

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