A Light-Induced Annealing of Silicon Implanted Layers

2008 ◽  
Vol 573-574 ◽  
pp. 229-235
Author(s):  
Bo Lojek
Keyword(s):  
Experimental Data ◽  
Experimental Evidence ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Semiconductor Material ◽  
Damaged Material ◽  
Optical Irradiation ◽  
Energy States ◽  
The Impact

Since introducing Rapid Thermal Annealing, there has been disagreement among experimental data of ion-implanted and annealed layers. One explanation of these differences is the impact of optical irradiation and its interaction with semiconductor material. Although no plausible explanation has been offered, experimental evidence of “photonic effects” was reported in many works. In this work we estimate energy per atom available during recombination of the excited carriers. It is argued that the localization of energy states inside the band gap in ion-implant damaged material is responsible for “photonic effects.”

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

Improvement of band gap profile in Cu(InGa)Se2 solar cells through rapid thermal annealing

2014 ◽  
Vol 54 ◽  
pp. 48-53 ◽  
Author(s):  
D.S. Chen ◽  
J. Yang ◽  
Z.B. Yang ◽  
F. Xu ◽  
H.W. Du ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

1996 ◽  
Vol 74 (S1) ◽  
pp. 32-34 ◽  
Author(s):  
J. -J. He ◽  
Emil S. Koteles ◽  
M. Davis ◽  
P. J. Poole ◽  
M. Dion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Ion Implantation ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Pin Diode ◽  
Excess Loss ◽  
Absorption Constant

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 279-282
Author(s):  
V.G. Litovchenko ◽  
I.P. Lisovskyy ◽  
M. Voitovych ◽  
Andrey V. Sarikov ◽  
S.O. Zlobin ◽  
...  
Keyword(s):  
Experimental Data ◽  
Infrared Spectroscopy ◽  
Kinetic Model ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Structure ◽  
Oxide Phase ◽  
Interstitial Oxygen ◽  
Single Crystalline ◽  
Oxygen Precipitation

In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

scholarly journals Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 130 ◽  
Author(s):  
Jin Chen ◽  
Fengchao Wang ◽  
Bobo Yang ◽  
Xiaogai Peng ◽  
Qinmiao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Gap Energy ◽  
Czts Thin Film ◽  
Gap Energy ◽  
Thermal Solution ◽  
Absorbing Layer

In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 °C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.

Effects of rapid thermal annealing on wide band gap tungsten oxide films

2020 ◽  
Vol 142 ◽  
pp. 106541 ◽  
Author(s):  
Man Jiang ◽  
Guanguang Zhang ◽  
Conghao Li ◽  
Jinxiang Liu ◽  
Kaiyue Guo ◽  
...  
Keyword(s):  
Band Gap ◽  
Tungsten Oxide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Oxide Films ◽  
Wide Band ◽  
Wide Band Gap

Fabrication of C54-TiSi2 Thin Films Using Cathodic Arc Deposition and Rapid Thermal Annealing

2007 ◽  
Vol 1052 ◽  
Author(s):  
Hui Xia ◽  
William R. Knudsen ◽  
Paul L. Bergstrom
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Bias ◽  
Cathodic Arc Deposition ◽  
The Impact ◽  
Cathodic Arc ◽  
Arc Deposition

AbstractDue to its low electrical resistivity and high thermal stability, C54-TiSi2 thin films can be used in some MEMS application, such as RF MEMS, to reduce RC delay and improve dynamic performance. In this paper, TiSi2 thin films have been prepared for the first time by using cathodic arc deposition to study the impact of energetic ion bombardment on the film microstructure and subsequent C49-C54 phase transformation during annealing. TiSi2 compound was used as the cathode and a substrate bias was varied to control kinetic energy of the ions during the film growth. Rutherford backscattering spectrometry and transmission electron microscopy were utilized to characterize the film composition and microstructure. The composition of the resultant TiSix thin films varies from x=2.4 to x=1.4 when the substrate bias was varied from floating to –200V. The as-deposited TiSix films are amorphous under no substrate heating and a phase separation at nano scale with inhomogeneous distribution of Ti and Si atoms was observed within the amorphous phase. Si atoms are seen to segregate on the boundary of Ti-rich domains and the domain size increased with the substrate bias. For a 90nm-thick TiSi2 film deposited on a SiO2/Si substrate, kinetics of the C49-C54 phase transformation was studied by measuring the change of film resistivity upon rapid thermal annealing. It was found that the C49-C54 phase transition temperature is higher (>900°C) for the arc-deposited TiSi2 thin films compared to evaporated and sputtered films and the activation energy for the transformation was calculated to be 6.1±0.2eV.

The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface

1998 ◽  
Vol 510 ◽  
Author(s):  
P.K. Hurley ◽  
C. Leveugle ◽  
A. Mathewson ◽  
D. Doyle ◽  
S. Whiston ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Energy Gap ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Density Profiles ◽  
Static Capacitance ◽  
Silicon Based ◽  
The Impact

AbstractIn this work, we present results and analysis which demonstrate the influence of rapid thermal annealing (RTA) on the properties of the Si(100)-SiO2 interface. Polysilicon/oxide/silicon capacitor structures were subjected to RTA treatments, in a nitrogen ambient, over the temperature range 600-1050°C. The structures were examined using high frequency and quasi-static capacitance-voltage (CV) analysis to determine the interface state density profile across the energy gap immediately following the RTA step. The effect of hydrogen annealing subsequent to the RTA process is also presented. Based on the analysis of the interface state density profiles, it is suggested in this work, that RTA (T > 600°C) exposes silicon dangling bond (Pb) centres at the Si(100)-SiO2 interface. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are discussed.

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