Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions

2009 ◽  
Vol 609 ◽  
pp. 123-127
Author(s):  
Jaroslav Rusnák ◽  
Michal Ružinský ◽  
Kentaro Imamura ◽  
Taketoshi Matsumoto ◽  
Miloslav Štefečka ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Low Voltage ◽  
Deep Level ◽  
Interface Properties ◽  
Voltage Step ◽  
Chemical Solutions ◽  
Thin Oxide ◽  
Transient Spectroscopy ◽  
Labview Platform ◽  
Mos Structures

An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.

Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures

1996 ◽  
Vol 11 (3) ◽  
pp. 360-365 ◽  
Author(s):  
M Mukhopadhyay ◽  
S K Ray ◽  
T B Ghosh ◽  
M Sreemany ◽  
C K Maiti
Keyword(s):  
Low Temperatures ◽  
Interface Properties ◽  
Oxide Layers ◽  
Thin Oxide ◽  
Strained Sige

On Similar Electrical, Optical and Structural Properties of MOS Structures Prepared on a-Si:H/c-Si, Porous Silicon/c-Si, and c-Si

2009 ◽  
Vol 609 ◽  
pp. 11-25
Author(s):  
Emil Pinčík ◽  
Hikaru Kobayashi ◽  
Róbert Brunner ◽  
Masao Takahashi ◽  
Jaroslav Rusnák ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Structural Properties ◽  
Deep Level ◽  
Grazing Incidence ◽  
Flat Band ◽  
Light Illumination ◽  
Transient Spectroscopy ◽  
P Type ◽  
Silicon Based ◽  
Mos Structures

The paper presents results of research of similar electrical, optical and structural properties of three types of MOS structures prepared on different Si-based semiconductors. Electrical interface properties are investigated by institutionally produced equipment with Charge Version of Deep Level Transient Spectroscopy and time domain C-V. X-ray diffraction at grazing incidence angles is applied to control their structural properties. Optical properties of selected structures are investigated by photoluminescence measurements at liquid helium temperature (approx. 6K in cryostat). Dominant interest is focused on analysis of both electrical properties of MOS porous silicon based structures prepared on p-type crystalline Si and photoluminescence signals of the structures observed around 1.1 eV, respectively. Such parameters as Fermi level position, flat-band voltage, surface potential, position of deep level hole traps, and acceptor density are calculated for various conditions as defined by sample ambient, temperature, and light illumination. Following two main findings are analyzed: i) total suppression of large C-V hysteresis due to suitable illumination and ii) recovering of part of detected interface states in the dark.

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Open Physics ◽  
2011 ◽  
Vol 9 (1) ◽  
Author(s):  
Peter Hockicko ◽  
Peter Bury ◽  
Peter Sidor ◽  
Hikaru Kobayashi ◽  
Masao Takahashi ◽  
...  
Keyword(s):  
Deep Level ◽  
Annealing Treatment ◽  
Interface States ◽  
Acid Oxidation ◽  
Electrical Measurements ◽  
External Bias ◽  
Transient Spectroscopy ◽  
Mos Structures ◽  
Dlts Spectra

AbstractA set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Comparative Study of Electronically Controlled Motion of Hydrogen around Carbon and Platinum Atoms in Silicon

2004 ◽  
Vol 813 ◽  
Author(s):  
Yoichi Kamiura ◽  
Namula Bao ◽  
Kimihiro Sato ◽  
Kazuhisa Fukuda ◽  
Yasuyuki Iwagami ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Effect ◽  
Local Motion ◽  
Subsequent Recovery ◽  
Controlled Motion ◽  
Transient Spectroscopy ◽  
C Complex ◽  
Uniaxial Compressive Stress

ABSTRACTWe have studied the local motion of hydrogen in the neighborhood of carbon and platinum impurities by observing the stress-induced reorientation and subsequent recovery of two H-related (H-C and Pt-H2) complexes in Si, using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. We notice two interesting differences in hydrogen motion around carbon and platinum atoms. The first one is a difference in the temperature where stress-induced reorientation occurs. That of the H-C complex occurs at high temperatures above 250 K, while it occurs at low temperatures around 80 K for the Pt-H2 complex. The second difference is the effect of charge state of the complexes on their stress-induced reorientation and subsequent recovery. It occurs preferentially when an electron occupies the level of the H-C complex, but the Pt- H2 complex has the reverse effect of level occupancy. These differences are discussed from viewpoint of different atomic configurations and electronic states of two H-related complexes.

Oxide Degradation Resulting from Photoresist Ashing

1993 ◽  
Vol 309 ◽  
Author(s):  
P. I. Mikulan ◽  
T. T. Koo ◽  
O. O. Awadelkarim ◽  
S. J. Fonash ◽  
T. Ta ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Deep Level ◽  
Electrical Characterization ◽  
Si Substrate ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Degradation ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Mos Structures

AbstractIn this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generator (Upstream) and two microwave power reactors (Microwave 1 and Microwave 2). Aluminum capacitors were evaporated on the samples after the ashing for oxide evaluation. Electrical characterization of these MOS structures included capacitance verses voltage and time dependent dielectric breakdown measurements. We also looked for Si substrate damage in these samples using deep level transient spectroscopy and Schottky barrier current-voltage measurements. This characterization showed oxide damage varied widely with ashing tool. In all cases, however, there was no significant Si substrate damage.

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