A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
2009 ◽
Vol 615-617
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pp. 153-156
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Keyword(s):
A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.
1999 ◽
Vol 5
(6)
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pp. 413-419
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2021 ◽
pp. 1759-1829
2008 ◽
Vol 391
(4)
◽
pp. 1351-1359
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2017 ◽
pp. 221-224