Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls

2009 ◽  
Vol 615-617 ◽  
pp. 173-176
Author(s):  
Boris M. Sinelnikov ◽  
Vitaly A. Tarala ◽  
Ivan S. Mitchenko
Keyword(s):  
Silicon Carbide ◽  
Infrared Spectroscopy ◽  
Gas Phase ◽  
Chemical Deposition ◽  
Deposition Method ◽  
X Ray ◽  
Crystalline Films ◽  
Chemical Deposition Method ◽  
Cold Walls ◽  
Sic Films

The possibility of silicon carbide films production out of organosilicon chlorine-containing monomers is under analysis in this research. Silicon carbide films samples were produced by chemical deposition method out of gas phase in reactor with “cold walls”, in the conditions of low pressure. The influence of monomer type, substrate temperature on crystalline SiC films composition is also under consideration. The results of infrared spectroscopy, Raman scattering spectrometry and x-ray phase analysis are presented.

Chemical Deposition Method for Synthesis of Pt-TiO2 Composite Nanotubes with Photoelectrochemical Activity

2012 ◽  
Vol 465 ◽  
pp. 276-282
Author(s):  
Zhong Hui Gao ◽  
Zhen Duo Cui ◽  
Xian Jin Yang
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Chemical Deposition ◽  
Pt Nanoparticles ◽  
High Density ◽  
Deposition Method ◽  
Photoelectrochemical Activity ◽  
X Ray ◽  
Transmission Electron ◽  
Chemical Deposition Method

Pt nanoparticles were successfully assembled in self-organized TiO2 nanotubes by a chemical deposition method. Scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used for characterizing the surface morphology and phase composition. Photocurrent response activity was measured. Different morphology of Pt-TiO2 NTs exhibited different photocurrent generation efficiency. High density Pt nanoparticles depositing on TiO2 NTs decreased the photocurrent of Pt-TiO2 electrodes. It was because the high density Pt nanoparticles could become the recombination centers of photoelectrons and holes.

Synthesis and Characterization of SrSiO3 by Chemical Deposition Method

2012 ◽  
Vol 204-208 ◽  
pp. 3952-3955 ◽  
Author(s):  
Zheng Quan Zhang ◽  
Yu Ling Wang ◽  
Xiao An Yue ◽  
En Ze Wang ◽  
Li Zhen Zou
Keyword(s):  
Phase Composition ◽  
Sintering Temperature ◽  
Chemical Deposition ◽  
Raw Material ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Deposition Method ◽  
Strontium Silicate

Nitric acid strontium and potassium silicate as raw material, the strontium silicate was synthesized preparation the strontium silicate was synthesized by chemical deposition method， and the strontium silicate was sintered for three hours in 850 °C, 1000 °C and 1150 °C. The effect of sintering temperature on phase composition, microstructure and the influence of purity of strontium silicate was studied using X-ray diffraction and electron scanning electron microscope and differential thermal-hot heavy analyzer. The formation mechanism of strontium silicate by chemical deposition method was analyzed. The results show that: the sintering temperature is effect on phase composition and microstructure of the strontium silicate, Compared with traditional high temperature solid reaction process, the chemical deposition method could greatly reduce the sintering temperature, and improve the powder purity.

Enhanced flux pinning in YBa2Cu3O7 layers by the formation of nanosized BaHfO3 precipitates using the chemical deposition method

2007 ◽  
Vol 90 (10) ◽  
pp. 102505 ◽  
Author(s):  
S. Engel ◽  
T. Thersleff ◽  
R. Hühne ◽  
L. Schultz ◽  
B. Holzapfel ◽  
...  
Keyword(s):  
Flux Pinning ◽  
Chemical Deposition ◽  
Deposition Method ◽  
Chemical Deposition Method

scholarly journals Sulfided Mo/Al2O3 hydrodesulfurization catalyst prepared by ethanol-assisted chemical deposition method

2013 ◽  
Vol 34 (4) ◽  
pp. 659-666 ◽  
Author(s):  
Gang SHI ◽  
Wei HAN ◽  
Pei YUAN ◽  
Yu FAN ◽  
Xiaojun BAO
Keyword(s):  
Chemical Deposition ◽  
Deposition Method ◽  
Chemical Deposition Method

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

scholarly journals Phase transition and thermal stability of epitaxial PtSe2 nanolayer on Pt(111)

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30934-30943 ◽  
Author(s):  
Yongfeng Tong ◽  
Meryem Bouaziz ◽  
Hamid Oughaddou ◽  
Hanna Enriquez ◽  
Karine Chaouchi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Thermal Stability ◽  
Chemical Deposition ◽  
Deposition Method ◽  
Temperature Dependent ◽  
Chemical Deposition Method ◽  
Thermal Stability Of

LEED, STM and XPS techniques were used to systematically study a temperature-dependent phase transition on a PtSe2 film grown on the surface of Pt(111) by a chemical deposition method.

Fabrication of Pb(Zr, Ti)O3 Thin Films by Liquid Source Misted Chemical Deposition Method Equipped with a Mist-Droplet Size Controller

2003 ◽  
Vol 53 (1) ◽  
pp. 287-297
Author(s):  
Susumu Kawasaki ◽  
Shin-Ichi Motoyama ◽  
Toshiaki Tatsuta ◽  
Osamu Tsuji ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Droplet Size ◽  
Chemical Deposition ◽  
Deposition Method ◽  
Liquid Source ◽  
Chemical Deposition Method
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