SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
2010 ◽
Vol 645-648
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pp. 1029-1032
Keyword(s):
In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of β ~ 2.7, whereas the HBT with an Al content below 0.5 showed β ~ 0.1.
1989 ◽
Vol 36
(9)
◽
pp. 1850-1852
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2013 ◽
Vol 60
(9)
◽
pp. 2768-2775
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1994 ◽
Vol 41
(10)
◽
pp. 1698-1707
◽
1994 ◽
Vol 28
(1-3)
◽
pp. 257-260
◽
Keyword(s):
Keyword(s):