Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 183-186 ◽  
Author(s):  
Milena Beshkova ◽  
Jean Lorenzzi ◽  
Nikoletta Jegenyes ◽  
Jens Birch ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Stacking Faults ◽  
Reciprocal Space ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Types

3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.

GROWTH MODES AND DEFECTS OF MANGANESE MERCURY THIOCYANATE CRYSTALS OBSERVED BY AFM

2009 ◽  
Vol 16 (01) ◽  
pp. 19-22
Author(s):  
Y. L. GENG ◽  
Z. H. SUN
Keyword(s):  
Atomic Force Microscopy ◽  
Screw Dislocation ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
Controlled Growth ◽  
Growth Mechanisms ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Nucleation Growth

Growth mechanisms and defects formation of the manganese mercury thiocyanate (MMTC) crystal have been investigated by atomic force microscopy (AFM). Both screw dislocation controlled growth and 2D nucleation growth occur on the {110} faces. Stacking faults are observed among dislocation hillocks and the formation of them probably results from the different crystallization orientations of different spirals. Hollow channels are found around the nucleation islands and the formation of them is due to the instability of the interface generated by the rapid nucleation and growth speeds.

The effects of different types of additives on growth of biomineral phases investigated by in situ atomic force microscopy

2019 ◽  
Vol 509 ◽  
pp. 8-16 ◽  
Author(s):  
Kang Rae Cho ◽  
Prashant Kulshreshtha ◽  
Kuang Jen J. Wu ◽  
Jong Seto ◽  
S. Roger Qiu ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Types

scholarly journals Tracking On-Surface Chemistry with Atomic Precision

Synlett ◽  
2017 ◽  
Vol 28 (19) ◽  
pp. 2509-2516 ◽  
Author(s):  
Peter Jacobse ◽  
Marc-Etienne Moret ◽  
Robertus Klein Gebbink ◽  
Ingmar Swart
Keyword(s):  
Atomic Force Microscopy ◽  
Single Molecule ◽  
Graphene Nanoribbons ◽  
Single Molecule Level ◽  
Force Microscopy ◽  
The Past ◽  
Atomic Force ◽  
Atomic Precision ◽  
Different Types ◽  
Insight Into

The field of on-surface synthesis has seen a tremendous development in the past decade as an exciting new methodology towards atomically well-defined nanostructures. A strong driving force in this respect is its inherent compatibility with scanning probe techniques, which allows one to ‘view’ the reactants and products at the single-molecule level. In this article, we review the ability of noncontact atomic force microscopy to study on-surface chemical reactions with atomic precision. We highlight recent advances in using noncontact atomic force microscopy to obtain mechanistic insight into reactions and focus on the recently elaborated mechanisms in the formation of different types of graphene nanoribbons.

Interpreting atomic force microscopy nanoindentation of hierarchical biological materials using multi-regime analysis

Soft Matter ◽  
2015 ◽  
Vol 11 (7) ◽  
pp. 1281-1292 ◽  
Author(s):  
M. R. Bonilla ◽  
J. R. Stokes ◽  
M. J. Gidley ◽  
G. E. Yakubov
Keyword(s):  
Atomic Force Microscopy ◽  
Cell Wall ◽  
Plant Cell ◽  
Elastic Membrane ◽  
Analysis Method ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Types ◽  
Membrane Deflection ◽  
Regime Analysis

The graphic illustrates different types of deformation occurring during indentation of a plant cell; the cell wall compression and elastic membrane deflection. We are seeking to disentangle these contributions using a new multi-regime analysis method, the mathematical gist of which is illustrated by the formula at the bottom of the figure.

Bitumen Morphology as Observed by Phase-Detection Atomic Force Microscopy

2008 ◽  
Vol 587-588 ◽  
pp. 981-985 ◽  
Author(s):  
Elisabete R. Costa ◽  
Rogerio Colaço ◽  
António Correia Diogo
Keyword(s):  
Atomic Force Microscopy ◽  
Strong Dependence ◽  
Phase Detection ◽  
Heterogeneous Mixture ◽  
Modified Bitumen ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Types ◽  
Para Phase

An analysis of the microstructure of several modified bitumen shown by phase detection Atomic Force Microscopy (AFM) is presented here. The phase detection and topographic AFM images, displayed three different types of microstructure: the so-called catana phase domains (beelike structures) dispersed in the peri-phase are present in most of the cases; para-phase domains are also observed in the neighbourhood of both catana and peri-phases. These results are consistent with the picture of bitumen as a heterogeneous mixture, as one should expect. The proportions of all these phases display a rather strong dependence on the nature of the modified bitumen considered, on the concentration of the modifier, as well as on the amount of aging of the mix.

Gate Oxide Defect Localization and Analysis by Using Conductive Atomic Force Microscopy

2005 ◽  
Author(s):  
Z. H. Lee ◽  
C. J. Lin ◽  
S. W. Lai ◽  
J. H. Chou
Keyword(s):  
Atomic Force Microscopy ◽  
Case Studies ◽  
Gate Oxide ◽  
Wet Etching ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Defect Localization ◽  
Different Types ◽  
Voltage Contrast

Abstract This paper describes gate oxide defect localization and analysis using passive voltage contrast (PVC) and conductive atomic force microscopy (C-AFM) in a real product through two case studies. In this paper, 10% wt KOH was used to etch poly-Si and expose gate oxide. In the case studies, different types of gate oxide defects will cause different leakage paths. According to the I-V curve measured by C-AFM, we can distinguish between short mode and gate oxide related leakage. For gate oxide leakage, KOH wet etching was successfully used to identify the gate oxide pinholes.

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