scholarly journals Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

2011 ◽  
Vol 679-680 ◽  
pp. 567-570 ◽  
Author(s):  
Duy Minh Nguyen ◽  
Gontran Pâques ◽  
Nicolas Dheilly ◽  
Christophe Raynaud ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Temperature Range ◽  
Avalanche Diodes ◽  
Ionization Coefficients

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

scholarly journals Temperature Dependence of Viscosity and Density of cis-1,4/trans-1,3-Dimethylcyclohexane and Several other Commonly Used Organic Solvents

2003 ◽  
Vol 217 (6) ◽  
pp. 707-722 ◽  
Author(s):  
A. A. Ruth ◽  
H. Lesche ◽  
B. Nickel
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Organic Solvents ◽  
Temperature Regime ◽  
Dynamic Viscosity ◽  
Temperature Range ◽  
Viscosity Measurements ◽  
Glass Forming ◽  
Temperature Ranges

AbstractThe dynamic viscosity (η) of the glass-forming 50:50 mixture of cis-1,4/trans-1,3-dimethylcyclohexane (ct-DMCH) was measured from 293 K down to ≈ 126 K where η ~ 1.2 × 106 mPas. The viscosity measurements of several other commonly used solvents cover the range from 293 K down to ≈ 148 K (η ~ 1.4 × 104 mPas) for 1-propanol (1-Prop), to ≈118 K (η ~ 2.5 × 102 mPas) for 2-methylpentane (2-MP), to ≈ 167 K (η ~ 10.0 mPas) for isooctane (Isooct), to ≈ 183 K (η ~ 2.8 mPas) for cyclopentane (CP) and down to ≈ 98 K (η ~ 4.6 × 102 mPas) for the 30:70 mixture of cyclopentane/isopentane (CP/IP). The density (ρ) of all solvents was measured correspondingly over appropriate temperature ranges. For the solvents studied here, the temperature dependence of the viscosity can be represented by a single Arrhenius term down to ~180 K. Over a wider temperature range down to ~118K the sum of two Arrhenius terms is required, and in the low temperature regime a Vogel–Tammann–Fulcher expression is necessary to adequately describe the temperature dependence of the dynamic viscosity.

Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

1992 ◽  
Vol 61 (7) ◽  
pp. 825-827 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. P. R. David ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Temperature Impact ◽  
Ionization Coefficients ◽  
Barrier Tunneling

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

2012 ◽  
Vol 717-720 ◽  
pp. 545-548 ◽  
Author(s):  
D.M. Nguyen ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Gontran Pâques ◽  
Sigo Scharnholz ◽  
...  
Keyword(s):  
Electric Field ◽  
Light Source ◽  
Impact Ionization ◽  
Optical Beam ◽  
Induced Current ◽  
Carrier Injection ◽  
Field Range ◽  
Avalanche Diodes ◽  
Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.

Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

2003 ◽  
Vol 94 (1) ◽  
pp. 423-430 ◽  
Author(s):  
Louis Tirino ◽  
Michael Weber ◽  
Kevin F. Brennan ◽  
Enrico Bellotti ◽  
Michele Goano
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization ◽  
Zinc Blende ◽  
Ionization Coefficients ◽  
The Impact

scholarly journals Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

2021 ◽  
Vol 68 (3) ◽  
pp. 1228-1234
Author(s):  
Lina Cao ◽  
Zhongtao Zhu ◽  
Galen Harden ◽  
Hansheng Ye ◽  
Jingshan Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization ◽  
Ionization Coefficients
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