A Convenient Method for Synthesis of Nano-Titania Thin Films from Aqueous TiO2 Precursor Sols

2011 ◽  
Vol 694 ◽  
pp. 466-470
Author(s):  
Wen Dong Liang ◽  
Xian Kun Wang ◽  
Yong Ping Yang

Anatase TiO2 thin films were prepared on glass substrates by dip-coating method with TiCl4 as the Ti precursor hydrolysis in a mixed solvent of alcohol and water. The effects of preparation parameters such as the alcohol species, the alcohol/water (A/W) ratio, and the dosage of TiCl4 (the volume ratio of TiCl4 and mixed solution) were investigated. The best preparation condition was optimized that with the isopropanol / H2O volume ratio of 65:35, the dosage of TiCl4 at 3%. XRD, SEM, TEM and UV–Vis photospectroscopy were used to analyze the characteristics of the solution and films. The films have a high hydrophilicity after illuminating with ultraviolet light, it have a good adherence and can be used as an efficient photocatalyst.

2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.


2012 ◽  
Vol 465 ◽  
pp. 165-171
Author(s):  
Jin Ming Liu ◽  
Xiao Ru Zhao ◽  
Li Bing Duan ◽  
Xiao Jun Bai ◽  
Ning Jin ◽  
...  

Anatase TiO2- thin films on glass substrates were prepared by sol-gel dip-coating method. We designed a multi-round annealing process which was under the air pressure of 5 Pa and then 5×10-2 Pa for one hour each at 550 °C, and such process was repeated for three times. The special designed annealing process can obviously improve the conductivity of the udoped TiO2- thin films. The minimum resistivity of the undoped TiO2- thin films reached 0.8 Ω cm after being treated by the multi-round annealing process. It was demonstrated that such annealing process was an effective way to increase the defects in TiO2- thin films such as oxygen vacancies. The average transmittances of the films were approximately 60~80% in the visible range with the forbidden gaps of 3.25~3.35 eV. After the multi-round annealing process, the optical forbidden gaps of the films became narrowed slightly, which might be also related to the defects introduced during the multi-annealing process.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 813-816 ◽  
Author(s):  
A. Conde-Gallardo ◽  
M. García-Rocha ◽  
I. Hernández Calderón ◽  
R. Palomino-Merino

Results on the fabrication and characterisation of thin films of the novel host, titania ( TiO 2), for the Tb 3+ activator ion are reported. The titania films were produced by the sol-gel process at room temperature using the dip coating method and deposited on silicon and corning glass substrates. It is shown that a different surface morphology is developed for the TiO 2:Tb films deposited on different substrates. When enough amount of Tb is incorporated and, a He-Cd 325 nm photoexcitation is used as excitation line, the films show green photoluminescence (PL) signal associated with the 5 D 4→7 F j transition of the electronic structure of Tb 3+ plus an broad band due to matrix's defects. The PL emission has better characteristics for the films deposited on silicon wafers.


2018 ◽  
Vol 36 (3) ◽  
pp. 427-434 ◽  
Author(s):  
S. Benzitouni ◽  
M. Zaabat ◽  
A. Mahdjoub ◽  
A. Benaboud ◽  
B. Boudine

AbstractHeavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.


2017 ◽  
Vol 28 (23) ◽  
pp. 17499-17504 ◽  
Author(s):  
M. I. Khan ◽  
Muhammad Saleem ◽  
K. A. Bhatti ◽  
Rabia Qindeel ◽  
Hayat Saeed Althobaiti ◽  
...  

Optik ◽  
2013 ◽  
Vol 124 (23) ◽  
pp. 6201-6204 ◽  
Author(s):  
A. Ranjitha ◽  
N. Muthukumarasamy ◽  
M. Thambidurai ◽  
R. Balasundaraprabhu ◽  
S. Agilan

2013 ◽  
Vol 678 ◽  
pp. 108-112 ◽  
Author(s):  
Narayanaswamy Gokilamani ◽  
N. Muthukumarasamy ◽  
Mariyappan Thambidurai

Nanocrystalline titanium dioxide (TiO2) thin films have been prepared by dip coating method. The TiO2 thin films have been coated on glass substrate and annealed at 400, 450 and 500° C respectively. The X- ray diffraction pattern shows that TiO2 nanocrystalline thin films are of anatase structure and the grain size is found to be in the range of 20-35 nm. The annealed films have been observed to be nanocrystalline in nature and the crystallinity has been observed to improve on annealing. The surface topography of the films has been studied using atomic force microscope. The optical properties have been studied using transmittance spectra. The band gap has been found to lie in the range of 3.70 to 3.83 eV depending on the annealing temperature.


2018 ◽  
Vol 762 ◽  
pp. 306-310
Author(s):  
Gundars Mežinskis ◽  
Darja Larionova ◽  
Liga Grase

The development of immobilized visible light-active photocatalysts has attracted growing scientific interest due to numerous potential commercial applications. In this work sonicated and unsonicated sols were used for the development of thin films on glass substrates. The coatings were prepared using Fe2O3-TiO2 sols containing 1-5 mol% Fe2O3 and 99-95 mol% TiO2. The coatings were obtained by dip-coating method and annealed at 500 °C for 1 hour. The synthesized samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, UV-Vis spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The ultrasound treatment of sols led to the reduction of the size of iron doped nanocrystals of TiO2 and absorption enhancement in the visible light.


2013 ◽  
Vol 678 ◽  
pp. 103-107 ◽  
Author(s):  
Arumugam Ranjitha ◽  
Natarajan Muthukumarasamy ◽  
Santhanam Agilan ◽  
Mariyappan Thambidurai ◽  
Rangasamy Balasundraprabhu ◽  
...  

Nanocrystalline TiO2 thin films were prepared by sol-gel dip coating method. The structural investigations were carried out using x-ray diffraction technique. Anatase TiO2 thin films with tetragonal phase were obtained and the grain size was observed to lie in the range of 21-25 nm. Analysis on the surface topography of prepared films have been carried out using atomic force microscopy (AFM). The band gap energy is calculated from the absorption spectra of TiO2 films and is found to lie in the range 3.3 to 3.7 eV.


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