Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope

2012 ◽  
Vol 717-720 ◽  
pp. 375-378 ◽  
Author(s):  
Takashi Katsuno ◽  
Yukihiko Watanabe ◽  
Tsuyoshi Ishikawa ◽  
Hirokazu Fujiwara ◽  
Masaki Konishi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Electrical Field ◽  
Electrical Field Strength ◽  
Force Microscopy ◽  
Atomic Force ◽  
Koh Etching

The leakage current sources of 4H-SiC Schottky barrier diodes (SBDs) were analyzed using atomic force microscopy (AFM) to determine the surface morphology. Nanosized circular cone shaped pits (nanopits), which depth were distributed from 5 to 70 nm, were observed at the leakage current sources. The leakage currents of 4H-SiC SBDs generate at the nanopits due to the concentration of the electrical field strength. The positions of nanopits correspond to the positions of threading dislocations (TDs), which were identified from molten potassium hydroxide (KOH) etching.

Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes

2011 ◽  
Vol 98 (22) ◽  
pp. 222111 ◽  
Author(s):  
Takashi Katsuno ◽  
Yukihiko Watanabe ◽  
Hirokazu Fujiwara ◽  
Masaki Konishi ◽  
Hideki Naruoka ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes

Etching Treatment Effect on Surface Morphology of Dental Structures

2017 ◽  
Vol 68 (11) ◽  
pp. 2700-2703 ◽  
Author(s):  
Kamel Earar ◽  
Vasile Iulian Antoniac ◽  
Sorana Baciu ◽  
Simion Bran ◽  
Florin Onisor ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Phosphoric Acid ◽  
Human Teeth ◽  
Strong Bond ◽  
Force Microscopy ◽  
Atomic Force ◽  
Human Dentine ◽  
Dental Surface ◽  
Scanning Electron

This study examined and compared surface of human dentine after acidic etching with hydrogen peroxide, phosphoric acid liquid and gel. Surface demineralization of dentin is necessary for a strong bond of adhesive at dental surface. Split human teeth were used. After application of mentioned substances at dentin level measures of the contact angle and surface morphology were employed. Surface morphology was analyzed with the help of scanning electron microscopy and atomic force microscopy. Liquid phosphoric acid yielded highest demineralization showing better hydrophobicity than the rest, thus having more contact surface. Surface roughness are less evident and formed surface micropores of 4 �m remained open after wash and air dry providing better adhesive canalicular penetration and subsequent bond.

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Surface morphology studies on sublimation grown GaN by atomic force microscopy

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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