Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
2012 ◽
Vol 725
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pp. 15-18
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Keyword(s):
Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in the near-infrared wavelength was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.
Keyword(s):
Keyword(s):
2014 ◽
Vol 614
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pp. 71-74
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2012 ◽
Vol 25
(6)
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pp. 741-746
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