Ion Beam Sputter Deposition of Refractory Metal Oxides

AbstractOxides of hafnium, niobium, tantalum, and zirconium are deposited by ion beam sputtering of the pure metal targets using CO2 as working gas. The resulting thin films are amorphous, featureless smooth and of excellent adherence to semiconductor substrates. Despite a certain content of carbon they are highly transparent in the visible and near infrared wavelength range as determined by spectroscopic ellipsometry. Their wide range of refractive indices makes them suitable for multilayer optical filter design.

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TiOxCy Thin Film Deposition by CO2+-Ion Beam Sputtering of Titanium

MRS Proceedings ◽

10.1557/proc-316-917 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

BERTILO E. KEMPF

Keyword(s):

Near Infrared ◽

Ion Beam ◽

Thin Film Deposition ◽

Ion Source ◽

Film Deposition ◽

Refractive Indices ◽

Ion Beam Sputtering ◽

Infrared Wavelength ◽

Beam Sputtering ◽

Current Densities

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.

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Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

MRS Proceedings ◽

10.1557/proc-354-81 ◽

1994 ◽

Vol 354 ◽

Author(s):

R. Valizadeh ◽

J.S. Colligon ◽

S.E. Donnelly ◽

C.A. Faunce ◽

D. Park ◽

...

Keyword(s):

Nitrogen Content ◽

Ion Beam ◽

Arrival Rate ◽

Zirconium Nitride ◽

Ion Beam Sputtering ◽

Tem Analysis ◽

Grain Sizes ◽

Composition And Structure ◽

Wide Range ◽

Beam Sputtering

AbstractThe growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at. %, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes l-15nm which depend on the nitrogen content and the deposition temperature.

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Oxygen-Containing Diatomic Dications in the Gas Phase

European Journal of Mass Spectrometry ◽

10.1255/ejms.972 ◽

2009 ◽

Vol 15 (2) ◽

pp. 315-324 ◽

Cited By ~ 26

Author(s):

Jirí Fišer ◽

Klaus Franzreb ◽

Jan Lörinčík ◽

Peter Williams

Keyword(s):

Mass Spectrometry ◽

Gas Phase ◽

Mass Spectra ◽

Theoretical Study ◽

Ion Beam ◽

High Current ◽

Ion Beam Sputtering ◽

Oxygen Ion ◽

Wide Range ◽

Beam Sputtering

A variety of oxygen-containing diatomic dications XO2+ can be produced in the gas phase by prolonged high-current 16O− ion surface bombardment (oxygen ion beam sputtering) of a wide range of sample materials. These gas-phase species were detected by mass spectrometry at half-integer m/z values for ion flight times of the order of ∼10−5 s. Examples provided here include ion mass spectra of AsO2+, GaO2+, SbO2+, AgO2+, CrO2+ and BeO2+. A detailed theoretical study of the diatomic dication system BeO2+ is also presented.

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Optical Spectra and Surface Morphologies of Near-Infrared Narrow Band-Pass Filters Using Dual Ion Beam Sputtering

Acta Optica Sinica ◽

10.3788/aos202040.2131001 ◽

2020 ◽

Vol 40 (21) ◽

pp. 2131001

Author(s):

陈刚 Chen Gang ◽

刘定权 Liu Dingquan ◽

马冲 Ma Chong ◽

王凯旋 Wang Kaixuan ◽

张莉 Zhang Li ◽

...

Keyword(s):

Near Infrared ◽

Narrow Band ◽

Ion Beam ◽

Optical Spectra ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Band Pass ◽

Dual Ion Beam Sputtering ◽

Surface Morphologies

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Epitaxial growth and interface roughness of PdMn/Fe bilayer structures grown by ion-beam sputtering

MRS Proceedings ◽

10.1557/proc-671-o3.21 ◽

2001 ◽

Vol 672 ◽

Author(s):

Ning Cheng ◽

J.P. Ahn ◽

Werner Grogger ◽

Kannan Krishnan

Keyword(s):

Ion Beam ◽

Interface Roughness ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Orientation Relationships ◽

Magnetic Exchange ◽

Transmission Electron ◽

Magnetic Exchange Coupling ◽

Wide Range ◽

Beam Sputtering

ABSTRACTDifferent orientations of PdMn films and different stacking orders of PdMn and Fe on MgO(001) were studied. At low temperatures (T< 280°C) dominated by the kinetics of growth, a-axis orientated [PdMn(100)/Fe(001)/MgO(001)] was stabilized whilst c-axis [PdMn(001)/Fe(001)/MgO(001)] were obtained at higher temperatures (T> 300°C). The inverted structures, Fe(001)/PdMn(001)/MgO(001) and Fe(001)/PdMn(100)/MgO(001), were obtained epitaxially for the first time. The magnetic exchange coupling (He) of these PdMn/Fe bilayers show a wide range in values: ∼ 10 Oe for annealed a-axis samples, ∼ 33 Oe for c-axis normal samples and ∼ 68 Oe for c-axis inverted samples. The interface roughness of these samples was characterized by energy-filtered transmission electron microscopy (EFTEM). The orientation relationships were confirmed by x-ray diffraction and TEM. The possible origins for the He difference in a-axis and c-axis growth samples and the normal and inverted samples are discussed.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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TEM Study of Co/Pd and Co/Au Multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151015 ◽

1993 ◽

Vol 51 ◽

pp. 1036-1037

Author(s):

A.E.M. De Veirman ◽

F.J.G. Hakkens ◽

W.M.J. Coene ◽

F.J.A. den Broeder

Keyword(s):

Magnetic Anisotropy ◽

Ion Beam ◽

Perpendicular Magnetic Anisotropy ◽

Optical Recording ◽

Magnetic Multilayer ◽

Ion Beam Sputtering ◽

Cross Sectional ◽

Transmission Electron ◽

Beam Sputtering ◽

Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

MRS Proceedings ◽

10.1557/proc-762-a7.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Z.B. Zhou ◽

G.M. Hadi ◽

R.Q. Cui ◽

Z.M. Ding ◽

G. Li

Keyword(s):

Solar Cell ◽

Ion Beam ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Chamber Pressure ◽

Ion Beam Sputtering ◽

High Hydrogen ◽

Beam Sputtering ◽

Si Films ◽

Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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