Highly transparent conductive F-doped ZnO films in wide range of visible and near infrared wavelength deposited on polycarbonate substrates

2014 ◽  
Vol 614 ◽  
pp. 71-74 ◽  
Author(s):  
Xiangyu Zhang ◽  
Liping Zhu ◽  
Hongbin Xu ◽  
Linxiang Chen ◽  
Yanmin Guo ◽  
...  
Keyword(s):  
Near Infrared ◽  
Zno Films ◽  
Infrared Wavelength ◽  
Wide Range ◽  
Doped Zno

Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

2016 ◽  
Vol 27 (9) ◽  
pp. 9291-9296 ◽  
Author(s):  
Zhengwei Chen ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
Mitsuhiro Nishio ◽  
Qixin Guo
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Zno Films ◽  
Infrared Wavelength ◽  
Doped Zno

Wide Band Gap Al and In Co-doped ZnO Films for Near-Infrared Plasmonic Application

Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Wide Band ◽  
Zno Films ◽  
Wide Band Gap ◽  
Doped Zno ◽  
Co Doped

scholarly journals Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

2012 ◽  
Vol 725 ◽  
pp. 15-18 ◽  
Author(s):  
Isaho Kamata ◽  
Xuan Zhang ◽  
Hidekazu Tsuchida
Keyword(s):  
Basal Plane ◽  
Partial Dislocation ◽  
Near Infrared ◽  
Stacking Fault ◽  
Profile Measurement ◽  
Infrared Wavelength ◽  
Visible Light Range ◽  
Wide Range ◽  
Fault Region ◽  
Narrow Emission

Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in the near-infrared wavelength was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.

Ion Beam Sputter Deposition of Refractory Metal Oxides

1994 ◽  
Vol 354 ◽  
Author(s):  
B.E. Kempf ◽  
H.W. Dinges ◽  
A. PÖcker
Keyword(s):  
Near Infrared ◽  
Filter Design ◽  
Ion Beam ◽  
Optical Filter ◽  
Pure Metal ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Wide Range ◽  
Beam Sputtering ◽  
Ion Beam Sputter Deposition

AbstractOxides of hafnium, niobium, tantalum, and zirconium are deposited by ion beam sputtering of the pure metal targets using CO2 as working gas. The resulting thin films are amorphous, featureless smooth and of excellent adherence to semiconductor substrates. Despite a certain content of carbon they are highly transparent in the visible and near infrared wavelength range as determined by spectroscopic ellipsometry. Their wide range of refractive indices makes them suitable for multilayer optical filter design.

Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence

2014 ◽  
Vol 2 (3) ◽  
pp. 240-244 ◽  
Author(s):  
Yang Yang ◽  
Yunpeng Li ◽  
Canxing Wang ◽  
Chen Zhu ◽  
Chunyan Lv ◽  
...  
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Zno Films ◽  
Doped Zno ◽  
Rare Earth Doped

scholarly journals Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

2017 ◽  
Vol 7 ◽  
pp. 910-913 ◽  
Author(s):  
Jingyun Cheng ◽  
Guohua Cao ◽  
Haitao Zong ◽  
Chaoyang Kang ◽  
Erguang Jia ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Near Infrared ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Infrared Wavelength ◽  
Wide Range

The Properties of Heavily Al-Doped ZnO Films by Simultaneous rc and dc Magnetron Sputtering

2006 ◽  
Vol 118 ◽  
pp. 305-310 ◽  
Author(s):  
Su Shia Lin ◽  
Jow Lay Huang
Keyword(s):  
Surface Roughness ◽  
High Resistivity ◽  
Zno Films ◽  
Al Content ◽  
Dc Power ◽  
Wide Range ◽  
Amorphous Structures ◽  
Doped Zno ◽  
Surface Morphologies ◽  
Frequency Power

A radio frequency power (rf) was supplied to ZnO target, and a direct current (dc) power was supplied to Al target for the preparation of heavily Al-doped ZnO (ZnO:Al) films. The advantage of this kind of deposited method is that the Al content could be changed in a wide range. The ZnO:Al films prepared at different dc powers showed different surface morphologies, and corresponded to the different surface roughness. The ZnO:Al films prepared at high dc powers showed the amorphous structures, and resulted in very high resistivity. The resistivity of ZnO:Al film prepared at dc power of 40W was lower (8.52×10-3 -cm). It was mainly due to the relatively higher mobility, which probably resulted from the relatively low surface roughness, and corresponded to the surface morphology in the shape of cobblestone. In addition, the ZnO:Al films prepared at different dc powers showed different optical properties.

Near infrared to UV dielectric functions of Al doped ZnO films deposited on c-plane sapphire substrate using pulsed laser deposition

2013 ◽  
Vol 74 (11) ◽  
pp. 1533-1537 ◽  
Author(s):  
R. Thangavel ◽  
Mohammad Tariq Yaseen ◽  
Yia Chung Chang ◽  
Chia-Hao Hsu ◽  
Kuo-Wei Yeh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Near Infrared ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Doped Zno

scholarly journals Characterization of Predictable Quantum Efficient Detector over a wide range of incident optical power and wavelength.

2021 ◽  
Author(s):  
Mikhail Korpusenko ◽  
Farshid Manoocheri ◽  
Olli-Pekka Kilpi ◽  
Aapo Varpula ◽  
Markku Kainlauri ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Near Infrared ◽  
Optical Power ◽  
Depletion Region ◽  
Negative Slope ◽  
Entrance Window ◽  
Logarithmic Scale ◽  
Infrared Wavelength ◽  
Wide Range ◽  
Penetration Depths

Abstract We investigate the Predictable Quantum Efficient Detector (PQED) in the visible and near-infrared wavelength range. The PQED consists of two n-type induced junction photodiodes with Al2O3 entrance window. Measurements are performed at the wavelengths of 488 nm and 785 nm with incident power levels ranging from 100 µW to 1000 µW. A new way of presenting the normalized photocurrents on a logarithmic scale as a function of bias voltage reveals two distinct negative slope regions and allows direct comparison of charge carrier losses at different wavelengths. The comparison indicates mechanisms that can be understood on the basis of different penetration depths at different wavelengths (0.77 μm at 488 nm and 10.2 μm at 785 nm). The difference in the penetration depths leads also to larger difference in the charge-carrier losses at low bias voltages than at high voltages due to the voltage dependence of the depletion region.

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