An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes

Circuit simulation is of assistance to design and evaluate a power conversion circuit. A compact and accurate power device model is indispensable for obtaining appropriate circuit simulation results. This paper studies the compact equivalent circuit modeling of SiC Schottky Barrier diode (SiCSBD) and evaluates the developed model in turn-off switching operation. Two SiCSBDs having different specification are modeled and evaluated in this paper. The results show that the switching characteristics of SiCSBDs can be modeled with the equivalent circuit, whose configurations and parameters are identified from static I-V and C-V characteristics.

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Modeling and Simulation of the New Thin Film Transformer Equivalent Circuit

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.785-786.1273 ◽

2013 ◽

Vol 785-786 ◽

pp. 1273-1277

Author(s):

Xiao Ping Hu ◽

Liang Zheng ◽

Ye Long Zhong ◽

Li Yun Ye

Keyword(s):

Thin Film ◽

Modeling And Simulation ◽

Equivalent Circuit ◽

Circuit Modeling ◽

Automatic Extraction ◽

S Parameter ◽

Equivalent Circuit Modeling ◽

Equivalent Circuit Parameters ◽

Simulation Results

We research the new thin film transformer equivalent circuit modeling, simulate and modify the traditional estimate formula of the transformer equivalent circuit parameters, in order to attain the automatic extraction of thin film transformer parameters. This paper used MATLAB and Agilent ADS on the thin film transformers for the S parameter simulation. The simulation results show the estimation has better accurate and universal, it also shows the effect of different number of turns and thin film materials on the properties of thin film transformer.

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Equivalent Circuit Modeling of Patch-Based Piezoelectric Energy Harvesting on Plate-Like Structures With AC-DC Conversion

Volume 2: Integrated System Design and Implementation; Structural Health Monitoring; Bioinspired Smart Materials and Systems; Energy Harvesting ◽

10.1115/smasis2015-9035 ◽

2015 ◽

Cited By ~ 1

Author(s):

Amirreza Aghakhani ◽

Ipek Basdogan ◽

Alper Erturk

Keyword(s):

Equivalent Circuit ◽

Energy Harvester ◽

Circuit Modeling ◽

Energy Harvesters ◽

Piezoelectric Patch ◽

Piezoelectric Energy ◽

Equivalent Circuit Modeling ◽

Equivalent Circuit Parameters ◽

Simulation Results ◽

Multi Mode

The equivalent circuit modeling of the vibration-based energy harvesters for accurate estimation of electrical response has drawn much attention over the recent years. Different methods have been proposed to obtain the equivalent circuit parameters using analytical and finite element models of the piezoelectric energy harvesters. In such methods, the structure is a typical cantilever beam with piezoelectric layers under base excitation. As an alternative to beams, piezoelectric patch-based harvesters attached to thin plates can be considered due to the wide use of plate-like structures in automotive, marine and aerospace applications. Considering these needs, a multi-mode equivalent circuit model of a piezoelectric energy harvester integrated to a thin plate is developed in this study. Equivalent circuit parameters are obtained from analytical distributed-parameter model of the harvester which covers the electromechanical coupling behavior of the piezoelectric patch and vibration of the host plate. The multi-mode circuit representation of the harvester is built via electronic circuit simulation software SPICE. Using the SPICE software, electrical outputs of the piezoelectric energy harvester connected to linear and nonlinear circuit elements are computed. Simulation results are then validated for the standard AC-AC and AC-DC configurations. For the AC configuration, voltage Frequency Response Functions (FRFs) are calculated for various resistive loads and they exhibit excellent agreement with the published analytical closed-form solution. For the full-wave rectifier configuration, simulation results of the DC voltage and power outputs are calculated for a wide range of load resistance values and compared with the analytical single-mode expression of the harvester in the literature.

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Equivalent circuit simulation of HPEM-induced transient responses at nonlinear loads

Advances in Radio Science ◽

10.5194/ars-15-175-2017 ◽

2017 ◽

Vol 15 ◽

pp. 175-180 ◽

Cited By ~ 5

Author(s):

Miroslav Kotzev ◽

Xiaotang Bi ◽

Matthias Kreitlow ◽

Frank Gronwald

Keyword(s):

Equivalent Circuit ◽

Circuit Simulation ◽

Schottky Diodes ◽

Loop Antenna ◽

Circuit Modeling ◽

General Strategy ◽

Transient Responses ◽

Nonlinear Circuit ◽

Nonlinear Loads ◽

Equivalent Circuit Modeling

Abstract. In this paper the equivalent circuit modeling of a nonlinearly loaded loop antenna and its transient responses to HPEM field excitations are investigated. For the circuit modeling the general strategy to characterize the nonlinearly loaded antenna by a linear and a nonlinear circuit part is pursued. The linear circuit part can be determined by standard methods of antenna theory and numerical field computation. The modeling of the nonlinear circuit part requires realistic circuit models of the nonlinear loads that are given by Schottky diodes. Combining both parts, appropriate circuit models are obtained and analyzed by means of a standard SPICE circuit simulator. It is the main result that in this way full-wave simulation results can be reproduced. Furthermore it is clearly seen that the equivalent circuit modeling offers considerable advantages with respect to computation speed and also leads to improved physical insights regarding the coupling between HPEM field excitation and nonlinearly loaded loop antenna.

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Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽

10.3390/electronics10010063 ◽

2020 ◽

Vol 10 (1) ◽

pp. 63

Author(s):

Saima Hasan ◽

Abbas Z. Kouzani ◽

M A Parvez Mahmud

Keyword(s):

Equivalent Circuit ◽

Gate Voltage ◽

Voltage Dependence ◽

Drain Current ◽

Bilayer Graphene ◽

Circuit Modeling ◽

Equivalent Circuit Modeling ◽

Dual Gate ◽

Source Voltage ◽

Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

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