Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
2014 ◽
Vol 778-780
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pp. 238-242
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Keyword(s):
In this paper we used three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC substrates with miscuts towards the <11-20> and <1-100> directions. We analyze the grown film for different miscut angles (in the range 2° to 12° degrees) and different growth rates, finding that substrates with miscut of 3-4° degrees towards the <1-100> direction should be the best choice for the growth of high quality cubic epitaxial films, being able to promote, given a suitable pre-growth treatment to induce step bunching, the nucleation of single domain 3C-SiC films.
2015 ◽
Vol 821-823
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pp. 201-204
2013 ◽
Vol 740-742
◽
pp. 295-300
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2011 ◽
Vol 679-680
◽
pp. 48-54
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2016 ◽
Vol 95
◽
pp. 708-718
2013 ◽
Vol 21
(8)
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pp. 085010
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Keyword(s):
2015 ◽
Vol 142
(21)
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pp. 214707
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