Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma
2012 ◽
Vol 711
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pp. 66-69
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Keyword(s):
Top Down
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A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).
2012 ◽
Vol 717-720
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pp. 893-896
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Keyword(s):
2013 ◽
Vol 740-742
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pp. 825-828
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Keyword(s):
Keyword(s):
2017 ◽
Vol 35
(4)
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pp. 042003
1999 ◽
Vol 176
(1)
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pp. 743-746
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Keyword(s):
Keyword(s):
2001 ◽
Vol 45
(9)
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pp. 1683-1686
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Keyword(s):