Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 265-268 ◽  
Author(s):  
Svetlana Beljakowa ◽  
Martin Hauck ◽  
Michel Bockstedte ◽  
Felix Fromm ◽  
Martin Hundhausen ◽  
...  

Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density n below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered as nanopolytype inclusions in 3C-SiC.

Nanoscale ◽  
2019 ◽  
Vol 11 (44) ◽  
pp. 21074-21080 ◽  
Author(s):  
Lingling Du ◽  
Dongliang Feng ◽  
Xiaxia Xing ◽  
Yang Fu ◽  
Luis F. Fonseca ◽  
...  

The advanced PdCo NW sensors developed for the detection of hydrogen at a wide temperature range showed excellent low-temperature stability.


1999 ◽  
Vol 13 (29n31) ◽  
pp. 3786-3791 ◽  
Author(s):  
R. CAURO ◽  
J. C. GRENET ◽  
A. GILABERT ◽  
M. G. MEDICI

We report, for the first time, experiments of persistent photoconductivity (PPC) in thin films of manganese perovskites La 0.7 Ca 0.25 Ba 0.05 MnO 3 and La 0.7 Ca 0.2 Ba 0.1 MnO 3 showing a persistent decrease of a few percent of the resistance after illumination with visible light. These persistent photoinduced effects are seen only in a range of low temperatures (<25 K) well below the insulator-metal transition at respectively T c=173 K and T c=120 K. In this low temperature range, the transport mechanism is rather of activated hopping type regime.


2007 ◽  
Vol 556-557 ◽  
pp. 367-370 ◽  
Author(s):  
Michael Krieger ◽  
Kurt Semmelroth ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Martin Rambach ◽  
...  

We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)- doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts of highly doped samples (NA ≥ 7.2×1017 cm-3) reveal two series of conductance peaks, which cause two different slopes of the Arrhenius plot. The steep slope is attributed to the Al acceptor, while the flatter one - obtained from the low temperature peaks - is attributed to the activation energy ε3 of nearest neighbor hopping. We propose a model, which explains the unexpected sharpness of the low temperature conductance peaks and the disappearance of these peaks for low acceptor concentrations. The model is verified by simulation, and the AS results are compared with corresponding results obtained from resistivity measurements taken on 4H- and the identical 6HSiC samples.


2019 ◽  
Vol 7 (16) ◽  
pp. 9968-9976 ◽  
Author(s):  
Muhammad Rashad ◽  
Hongzhang Zhang ◽  
Xianfeng Li ◽  
Huamin Zhang

A Li3V2(PO4)3 based Mg2+/Li+ hybrid battery with excellent performance both at room temperature and low temperatures (0, −10, −20, −30, and −40 °C) is presented.


Observations are reported of the ferromagnetic domain structure of natural and synthetic single crystals, made at temperatures close to the low temperature transition with the aid of an acetone based magnetic colloid. The domain structure of the synthetic crystals was found to change radically over a small temperature range centred around –12 °C. These changes are correlated with the measured remanent magnetization. Fairly extensive colloid patterns were found on the natural crystals at low temperatures but when the natural crystals were annealed at 1200 °C this low temperature colloid structure was no longer found.


RSC Advances ◽  
2016 ◽  
Vol 6 (71) ◽  
pp. 66579-66588 ◽  
Author(s):  
J. Arturo Mendoza-Nieto ◽  
Heriberto Pfeiffer

Na2ZrO3 was synthetized via solid-state and tested in a low temperature range (30–80 °C) for carbonation and decarbonation processes using RH values between 0 and 80%. Results confirm that it is possible to accomplish successively at least 8 cycles.


2021 ◽  
pp. 2102122
Author(s):  
Jizhou Li ◽  
Shaofeng Li ◽  
Yuxin Zhang ◽  
Yang Yang ◽  
Silvia Russi ◽  
...  

2001 ◽  
Vol 15 (09n10) ◽  
pp. 319-322 ◽  
Author(s):  
SNEHADRI BIHARI OTA ◽  
JUAN BASCUÑÁN ◽  
SMITA OTA

We have measured the forward characteristics of a GaAlAs temperature sensor diode (Lake Shore) in the temperature range 10–70 K and for fixed current values between 10 nA to 500 μA. On the basis of certain extrapolations, we suggest that these diodes can be used for temperature measurement at at ultra low temperatures.


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