Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
2014 ◽
Vol 778-780
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pp. 265-268
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Keyword(s):
Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density n below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered as nanopolytype inclusions in 3C-SiC.
1999 ◽
Vol 13
(29n31)
◽
pp. 3786-3791
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2007 ◽
Vol 556-557
◽
pp. 367-370
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Fast kinetics of Mg2+/Li+ hybrid ions in a polyanion Li3V2(PO4)3 cathode in a wide temperature range
2019 ◽
Vol 7
(16)
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pp. 9968-9976
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Keyword(s):
1968 ◽
Vol 303
(1475)
◽
pp. 525-529
◽
2001 ◽
Vol 15
(09n10)
◽
pp. 319-322
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