Open Issues in SiC Bulk Growth

2014 ◽  
Vol 778-780 ◽  
pp. 3-8 ◽  
Author(s):  
Didier Chaussende ◽  
Kanaparin Ariyawong ◽  
Nikolaos Tsavdaris ◽  
Martin Seiss ◽  
Yun Ji Shin ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Industrial Development ◽  
Growth Process ◽  
Special Focus ◽  
Development Problem ◽  
Bulk Growth ◽  
Crystal Growth Process ◽  
Open Questions ◽  
Process Chemistry ◽  
Open Issues

In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an « industrial development problem », we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.

Experimental Verification of the Numerical Model for a CaF2 Crystal Growth Process

2002 ◽  
Vol 37 (1) ◽  
pp. 77-82 ◽  
Author(s):  
A. Molchanov ◽  
U. Hilburger ◽  
J. Friedrich ◽  
M. Finkbeiner ◽  
G. Wehrhan ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Experimental Verification ◽  
Growth Process ◽  
Caf2 Crystal ◽  
Crystal Growth Process

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

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