High-Frequency Ferromagnetic Properties of Nanocrystalline (Co2FeSi)1-x(Al2O3)x Heusler Alloy Films with Uniaxial Magnetic Anisotropy

2014 ◽  
Vol 787 ◽  
pp. 342-346
Author(s):  
Xiao Qin Cao ◽  
Shan Dong Li ◽  
Zhi Yi Cai ◽  
Hong Lei Du ◽  
Qian Xue ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Magnetic Anisotropy ◽  
High Frequency ◽  
Heusler Alloy ◽  
Alloy Films ◽  
Uniaxial Magnetic Anisotropy ◽  
Self Bias ◽  
Ferromagnetic Resonance Frequency ◽  
Deposited Films ◽  
Very High

A series of (Co2FeSi)1-x(Al2O3)xHeusler alloy films with various Al2O3-doping were prepared by an oblique sputtering method. It is exciting that the as-deposited films exhibit a very high in-plane uniaxial magnetic anisotropy (UMA) field up to 360 Oe and low coercivity of 12 Oe. Consequently, a very high self-bias ferromagnetic resonance frequency in excess of 5.02 GHz was obtained in as-deposited Co2FeSi films without any annealing. The good microwave ferromagnetic performances and the integrated circuits compatible fabrication process of Co2FeSi films make possible application in RF/microwave devices.

High-Frequency Performance of Co2FeAl Half-Metallic Films Prepared by Oblique Sputtering under Various Deposition Conditions

2014 ◽  
Vol 787 ◽  
pp. 368-372 ◽  
Author(s):  
Zhi Yi Cai ◽  
Shan Dong Li ◽  
Xiao Qin Cao ◽  
Hong Lei Du ◽  
Qian Xue ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Resonance Frequency ◽  
Ferromagnetic Resonance ◽  
High Frequency ◽  
Metallic Films ◽  
Soft Magnetic ◽  
Half Metallic ◽  
Self Bias ◽  
Ferromagnetic Resonance Frequency ◽  
High Frequency Performance

Co2FeAl full-Hesuler alloys show good soft magnetic properties, implying a promising high ferromagnetic resonance frequency. In this study, Co2FeAl films were deposited on Si (100) substrates using an oblique sputtering method. As expected, a good high-frequency performance was achieved in the as-deposited Co2FeAl films without any annealing. An obvious uniaxial magnetic anisotropy over 200 Oe with the magnetic hard axis along the radial direction of the sample turntable was obtained. As a result, the self-bias ferromagnetic resonance frequency reaches more than 4 GHz for the Co2FeAl films prepared under an integrated circuits compatible process. These results indicate that the Co2FeAl films are promising in integrated circuits RF/microwave devices.

scholarly journals Magnetic anisotropy of epitaxial Co2Fe-Ge Heusler alloy films on MgO (100) substrates

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055831 ◽  
Author(s):  
A. N. Pogorily ◽  
A. F. Kravets ◽  
V. V. Nevdacha ◽  
D. Y. Podyalovskiy ◽  
S. M. Ryabchenko ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Heusler Alloy ◽  
Alloy Films

Effect of the Thickness of Cr Interlayer on the High-Frequency Characteristics of FeCoTa/Cr/FeCoTa Multilayers

2011 ◽  
Vol 287-290 ◽  
pp. 1356-1359
Author(s):  
Shan Dong Li ◽  
Feng Xu ◽  
Ming Liu ◽  
Yi Hu ◽  
Jian Peng Wu ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Eddy Current ◽  
High Frequency ◽  
Anisotropy Field ◽  
Eddy Current Loss ◽  
Film Sample ◽  
Current Loss ◽  
Ferromagnetic Layers ◽  
Magnetic Decoupling ◽  
Ferromagnetic Resonance Frequency

The effect of non-ferromagnetic Cr interlayer on the high-frequency ferromagnetic properties (HFFMPs) was investigated by use of FeCoTa/Cr/ FeCoTa triple layered films. In conventional thought, the metal interlayer gives rise to a high eddy current loss and therefore a deteriorated HFFMP. However, it is found that HFFMPs depend on the thickness of Cr interlayer. The HFFPMs are improved by Cr-interlayer with a thickness less than 12 nm (sample C1). Comparing with the Cr-interlayer-free FeCoHf single layered film (sample C0), the magnetic anisotropy field of C1 dramatically increases from 185 Oe for C0 to 558 Oe for C1. As a consequence, a high ferromagnetic resonance frequency over than 3 GHz is achieved for sample C1. When the thickness of Cr-interlayer is more than 120 nm (C2), the HFFMPs are reduced due to the increase of eddy current loss and magnetic decoupling between the ferromagnetic layers.

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

scholarly journals Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

Materials ◽  
2018 ◽  
Vol 11 (1) ◽  
pp. 105 ◽  
Author(s):  
Atsufumi Hirohata ◽  
William Frost ◽  
Marjan Samiepour ◽  
Jun-young Kim
Keyword(s):  
Magnetic Anisotropy ◽  
Heusler Alloy ◽  
Perpendicular Magnetic Anisotropy ◽  
Alloy Films
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