The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

2015 ◽  
Vol 821-823 ◽  
pp. 785-788 ◽  
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka ◽  
Vít Zahlava
Keyword(s):  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Nitrogen Doping ◽  
Deep Level ◽  
Removal Rate ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Deep Acceptor ◽  
Measurement Results ◽  
Transient Spectroscopy

Commercial 1200V and 1700V MPS diodes and 1700V vertical JFETs produced on 4H-SiC n-type epilayers were neutron irradiated with fluences up to 4x1014 cm-2 (1 MeV neutron equivalent Si). Radiation defects and their effect on carrier removal were investigated by capacitance deep-level transient spectroscopy, I-V and C-V measurement. Results show that neutron irradiation introduces different point defects giving rise to deep acceptor levels which compensate nitrogen doping of the epilayer. The carrier removal rate increases linearly with nitrogen doping. Introduced defects deteriorate ON-state characteristics of irradiated devices while their effect on blocking characteristics is negligible. The effect of neutron irradiation can be simulated by TCAD tools using a simple model accounting for introduction of one dominant deep level (Z1/Z2 centre).

Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

2019 ◽  
Vol 963 ◽  
pp. 718-721
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Radiation Effects ◽  
Deep Level ◽  
Dose Range ◽  
Simulation Models ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Power Mosfets ◽  
Transient Spectroscopy ◽  
Good Agreement

Compact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by highenergy electrons, were developed. Two 1.7 kV class devices: the 14 A JBS diode C3D10170H and the 5 A SiC power MOSFETs C2M1000170D produced by Wolfspeed were irradiated by 4.5 MeV electrons in the dose range up to 2000 kGy. Electrical characteristics were measured prior to and after irradiation. Radiation defects were studied by deep level transient spectroscopy and the effect of irradiation on device characteristics was established. SPICE models taking into account the irradiation fluence were proposed and calibrated using the parameters extracted from experiment. Simulated characteristics show a very good agreement with reality.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 47-52 ◽  
Author(s):  
Eddy Simoen ◽  
K. Opsomer ◽  
Cor Claeys ◽  
Karen Maex ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Current ◽  
Deep Levels ◽  
Schottky Barriers ◽  
Deep Acceptor ◽  
Transient Spectroscopy

In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no traps have been found for germanidation temperatures up to 500 oC, suggesting that in both cases no marked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deep acceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe can be detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levels belonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reverse current of the Schottky barriers increases with TRTA, while the barrier height is also strongly affected.

Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 449-452 ◽  
Author(s):  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
T. Umeda ◽  
Junichi Isoya ◽  
Erik Janzén
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Energy Position ◽  
Paramagnetic Resonance ◽  
Deep Acceptor ◽  
Carbon Vacancy ◽  
Epr Signal ◽  
Transient Spectroscopy ◽  
Electron Paramagnetic

The SI-5 electron-paramagnetic-resonance (EPR) centre is a dominant defect in some high-purity semi-insulating (HPSI) SiC substrates and has recently been shown to originate from the negatively charged carbon vacancy-carbon antisite pair (VC − Si C ). In this work, photoexcitation EPR (photo-EPR) was used for determination of the energy position of deep acceptor levels of VCCSi in 4H-SiC. Our photo-EPR measurements in slightly n-type material show an increase of the EPR signal of VC − Si C for photon energies from ~0.8 eV to ~1.3 eV. Combining the data from EPR, deep level transient spectroscopy and supercell calculations we suggest that the (1–|2–) levels of the different configurations of the defect are located in the range ~0.8-1.1 eV below the conduction band.

Analyses of Compensation Related Defects in II-VI Compounds

1997 ◽  
Vol 487 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
P. Fernandez ◽  
B. Fraboni ◽  
J. Piqueras
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Induced Current ◽  
Deep Acceptor ◽  
Deep Traps ◽  
Compensation Process ◽  
Deep Donor ◽  
Transient Spectroscopy ◽  
Deep Donor Level

AbstractThe deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd0.8Zn0.2 Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allow to determine whether the observed deep levels are hole or electron traps.Among the observed deep centers, we have focused our attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. We have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl.

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