Optimization of Silicon-Based Fabrication Process Modeling for Optical Modulator

2016 ◽  
Vol 846 ◽  
pp. 230-236
Author(s):  
Hazura Haroon ◽  
Hanim Abdul Razak ◽  
Anis Suhaila Mohd Zain ◽  
Najimiah Radiah Mohamad
Keyword(s):  
Process Modeling ◽  
Photonic Devices ◽  
Fabrication Process ◽  
Taguchi Methods ◽  
Optical Modulator ◽  
Optical Modulators ◽  
Wide Range ◽  
Diffusion Temperature ◽  
Silicon Based ◽  
Fabrication Parameters

Silicon-based photonic devices have emerged as a high demand technology for a wide range of applications. Most of these devices can be realized by optical waveguides where it forms the basic structure for device construction. This project involved the optimization of silicon waveguide fabrication process modeling using Silvaco. The optimized silicon-based waveguide components are aimed to be implemented in future photonic devices such as optical modulators. The Taguchi methods are employed to study the influence of fabrication parameters variations on the fabrication performance such as etch rate and waveguide structure. Four fabrication parameters are investigated includes the diffusion temperature of the N - type channel, diffusion temperature of the P - type channel, silicon orientation and oxide thickness. The result shows that the temperature during the diffusion on an N - type channel has the most influence on the performance of the modulation efficiency of the silicon optical waveguide.

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

2011 ◽  
Vol 403-408 ◽  
pp. 4295-4299
Author(s):  
H. Hazura ◽  
A.R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P.S. Menon
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Photonic Devices ◽  
Wet Etching ◽  
Fabrication Process ◽  
Etching Time ◽  
Optical Modulators ◽  
Silicon Waveguide ◽  
Simulation And Experiment ◽  
Silicon Based

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

scholarly journals Silicon-Based Multilayer Waveguides for Integrated Photonic Devices from the Near to Mid Infrared

2021 ◽  
Vol 11 (3) ◽  
pp. 1227
Author(s):  
Iñaki López García ◽  
Mario Siciliani de Cumis ◽  
Davide Mazzotti ◽  
Iacopo Galli ◽  
Pablo Cancio Pastor ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Visible Range ◽  
Experimental Characterization ◽  
Mid Infrared ◽  
Wide Range ◽  
Infrared Spectral ◽  
Silicon Based ◽  
Optical Behavior ◽  
532 Nm

Advancements in spectroscopy, quantum optics, communication, and sensing require new classes of integrated photonic devices to host a wide range of non-linear optical processes involving wavelengths from the visible to the infrared. In this framework, waveguide (WG) structures designed with innovative geometry and materials can play a key role. We report both finite element modeling and experimental characterization of silicon nitride multilayer WGs from the visible to the mid-infrared spectral regions. The simulations evaluated optical behavior and mechanical stress as a function of number of WG layers and photonic structure dimensions. WGs were optimized for waveguiding at 1550 nm and 2640 nm. Experimental characterization focused on optical behavior and coupling losses from 532 nm to 2640 nm. Measured losses in WGs indicate a quasi-perfect waveguiding behavior in the IR range (with losses below 6 dB), with a relevant increase (up to 20 dB) in the visible range.

scholarly journals Fabrication of Electronically integrated, mass-manufactured, microscopic robots

2020 ◽  
Author(s):  
Marc Z. Miskin ◽  
Alejandro J. Cortese ◽  
Kyle Dorsey ◽  
Edward P. Esposito ◽  
Michael F. Reynolds ◽  
...  
Keyword(s):  
Fabrication Process ◽  
Robotic Systems ◽  
Naked Eye ◽  
Wide Range ◽  
Aqueous Environments ◽  
Building Components ◽  
Silicon Based

Abstract We have developed a fabrication process that can be used to build millions of microscopic, electronically-integrated robots. Our procedure includes steps for building silicon microelectronics, building components for actuation, encapsulation steps, and a process for releasing the robots into aqueous environments. Each step is carried out massively in parallel, allowing us to build over a million robots on a single 4-inch wafer. Broadly, the new actuators and fabrication protocols presented here offer a generic platform and can be used to make a wide range of silicon-based, functional robotic systems that are too small to be resolved by the naked eye.

scholarly journals Phosphorene-assisted silicon photonic modulator with fast response time

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1973-1979 ◽  
Author(s):  
Zhao Cheng ◽  
Rui Cao ◽  
Jia Guo ◽  
Yuhan Yao ◽  
Kangkang Wei ◽  
...  
Keyword(s):  
Response Time ◽  
High Speed ◽  
Fast Response ◽  
Optical Modulator ◽  
High Electron ◽  
Optical Modulators ◽  
Strong Light ◽  
Optical Signals ◽  
All Optical ◽  
Silicon Based

AbstractAll-optical modulators avoid the conversion from external electronic signals to optical signals and thus have the potential to achieve an energy-efficient high-speed photonic system. Phosphorene recently debuted as an attractive material that exhibits outstanding high electron mobility, strong light-matter interaction and modifiable bandgap, making it ideal for all-optical modulators. In this paper, by incorporating a phosphorene and silicon-based micro-ring resonator (MRR), we first propose and experimentally demonstrate a unique phosphorene-integrated all-optical modulator in telecommunications. By utilizing a phosphorene thin film with an average thickness of 22 nm as the absorption material, the rise time of only 479 ns and decay time of 113 ns are achieved, which is the fastest reported response time in the family of phosphorene modulators. The corresponding 3 dB bandwidth is larger than 2.5 MHz, and it exhibits a low-loss performance benefited from its finite bandgap. The proposed phosphorene/MRR hybrid modulator may have potential in the applications of all-optical interconnections.

scholarly journals Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Double Layer ◽  
Slow Light ◽  
Modulation Depth ◽  
Photonic Crystal Waveguide ◽  
Optical Modulators ◽  
Layer Graphene ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

scholarly journals Fabrication of Porous Silicon Based Humidity Sensing Elements on Paper

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Tero Jalkanen ◽  
Anni Määttänen ◽  
Ermei Mäkilä ◽  
Jaani Tuura ◽  
Martti Kaasalainen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Smart Cities ◽  
Low Cost ◽  
Electrical Characterization ◽  
Fabrication Process ◽  
Sensing Element ◽  
Paper Substrate ◽  
Roll To Roll ◽  
Silver Electrodes ◽  
Silicon Based

A roll-to-roll compatible fabrication process of porous silicon (pSi) based sensing elements for a real-time humidity monitoring is described. The sensing elements, consisting of printed interdigitated silver electrodes and a spray-coated pSi layer, were fabricated on a coated paper substrate by a two-step process. Capacitive and resistive responses of the sensing elements were examined under different concentrations of humidity. More than a three orders of magnitude reproducible decrease in resistance was measured when the relative humidity (RH) was increased from 0% to 90%. A relatively fast recovery without the need of any refreshing methods was observed with a change in RH. Humidity background signal and hysteresis arising from the paper substrate were dependent on the thickness of sensing pSi layer. Hysteresis in most optimal sensing element setup (a thick pSi layer) was still noticeable but not detrimental for the sensing. In addition to electrical characterization of sensing elements, thermal degradation and moisture adsorption properties of the paper substrate were examined in connection to the fabrication process of the silver electrodes and the moisture sensitivity of the paper. The results pave the way towards the development of low-cost humidity sensors which could be utilized, for example, in smart packaging applications or in smart cities to monitor the environment.

Silicon photonic devices for mid-infrared applications

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar
Keyword(s):  
Gas Sensing ◽  
Wavelength Region ◽  
Photonic Devices ◽  
Ring Resonators ◽  
Space Communications ◽  
Mid Infrared ◽  
Silicon Photonic ◽  
Processing Techniques ◽  
Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

Micropattern Effect on Breast Cancer Cells Behavior on Isotropically Etched Silicon Microenvironments

2010 ◽  
Author(s):  
Mehdi Nikkhah ◽  
Jeannine S. Strobl ◽  
Bhanu Peddi ◽  
Adedamola Omotosho ◽  
Masoud Agah
Keyword(s):  
Breast Cancer ◽  
Cancer Cells ◽  
Three Dimensional ◽  
Cancer Diagnostics ◽  
Breast Cancer Diagnostics ◽  
Wide Range ◽  
Etched Silicon ◽  
Directed Motility ◽  
Etched Surface ◽  
Silicon Based

In this paper we are investigating three dimensional (3-D) silicon-based microenvironments as potential platforms for breast cancer diagnostics. We have developed isotropically etched microstructures with a wide range of geometrical patterns for this purpose. Our results indicate that with the etched surface ratio of ∼65%, it is possible to capture 80–90% of the cancer cells within each silicon chip. After treatment of the cells with mitomycin C (to block the cell growth) more number of the cells are trapped inside the etched features for longer cultures times (72 h) suggesting that there is a directed motility and attraction of the cells toward the etched cavities and by optimally designing the etched features, the proposed platforms can be potentially used for diagnostics purposes.

scholarly journals All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Feiying Sun ◽  
Changbin Nie ◽  
Xingzhan Wei ◽  
Hu Mao ◽  
Yupeng Zhang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Single Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulator ◽  
Small Scale ◽  
Light Modulation ◽  
Optical Modulators ◽  
Signal Light ◽  
All Optical

Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.

Sign in / Sign up

Export Citation Format

Share Document