Three-Dimensional Imaging of Extended Defects in 4H-SiC
2016 ◽
Vol 858
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pp. 361-366
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This paper describes 3D imaging of extended defects in 4H-SiC using optical second-harmonic generation (SHG) and two-photon-exited photoluminescence (2PPL). SHG selectively yields the 3D images of 3C-inclusions in a 4H-SiC epilayer, while 2PPL provides 3D images of 3C-inclusions, 8H stacking faults and single Shockley stacking faults. 2PPL band-edge emission visualizes dislocation lines of threading screw dislocations and threading edge dislocations, the tilt angles of which are evaluated.
2015 ◽
Vol 821-823
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pp. 343-346
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2014 ◽
Vol 778-780
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pp. 338-341
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2005 ◽
Vol 53
(9)
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pp. 1109-1119
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2020 ◽
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