Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

In this paper, to verify implant effect characteristics variation by stripe type, grid type and circle type, the P+ implant patterning was studied. The result of two-dimensional simulation was controlled by adjusting the relative area of Schottky and p–n junction dimensions of the device, which is easily implemented during the device layout design. 4H-SiC JBSs with three types have been successfully fabricated and breakdown voltage in the range of 1694–2051 V has been achieved. The results of fabricated JBSs, show that the stripe type JBSs combine the best features of the P+ implant patterns.