Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

2016 ◽  
Vol 858 ◽  
pp. 753-756
Author(s):  
Takahiro Makino ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
Takeshi Ohshima
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Ion Irradiation ◽  
Single Species ◽  
Heavy Ion ◽  
Charge Collection ◽  
Lead Ion ◽  
Induced Charge ◽  
The Impact

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

2011 ◽  
Vol 58 (6) ◽  
pp. 2563-2569 ◽  
Author(s):  
F. El-Mamouni ◽  
E. X. Zhang ◽  
N. D. Pate ◽  
N. Hooten ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

2004 ◽  
Vol 48 (6) ◽  
pp. 1027-1044 ◽  
Author(s):  
J.R Schwank ◽  
V Ferlet-Cavrois ◽  
P.E Dodd ◽  
M.R Shaneyfelt ◽  
G Vizkelethy ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Charge Collection ◽  
Induced Charge

Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes

2013 ◽  
Vol 60 (4) ◽  
pp. 2647-2650 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Heavy Ion ◽  
Charge Collection ◽  
Schottky Barrier Diodes

Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

2001 ◽  
Vol 680 ◽  
Author(s):  
You-Sang Lee ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Accurate Approximation ◽  
Ionization Coefficient ◽  
Zinc Blende ◽  
The Impact

ABSTRACTThe breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
You-Sang Lee ◽  
D.-S. Byeon ◽  
Y.-I. Choi ◽  
I.-Y. Park ◽  
Min-Koo Han
Keyword(s):  
Closed Form ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Analytic Solutions ◽  
Ionization Coefficient ◽  
Closed Form Solutions ◽  
The Impact ◽  
Effective Ionization

ABSTRACTThe closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].

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