Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

2017 ◽  
Vol 897 ◽  
pp. 447-450 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this paper investigation of degradation 4H SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV was doine. It was determined the carrier removal rate (Vd), which amounted to 0.07 - 0.09 cm-1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics of up to doses ~ 1017 cm-2. It is concluded that the radiation resistance of SiC Schottky diodes is much greater than the radiation resistance of Si p-i-n diodes with the same breakdown voltages

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

2018 ◽  
Vol 924 ◽  
pp. 217-220 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Anatoly M. Strel'chuk ◽  
Andrey N. Yakimenko ◽  
Vitalii V. Kozlovski
Keyword(s):  
High Temperature ◽  
Radiation Resistance ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Simultaneous Effect ◽  
Current Voltage ◽  
Device Structures ◽  
Current Voltage Characteristics ◽  
Mev Protons

The change in the current-voltage characteristics and in Nd-Navalues in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.

scholarly journals Влияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки

2020 ◽  
Vol 46 (6) ◽  
pp. 35
Author(s):  
В.В. Козловский ◽  
O. Корольков ◽  
К.С. Давыдовская ◽  
A.А. Лебедев ◽  
М.Е. Левинштейн ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Resistance ◽  
Schottky Diodes ◽  
Irradiation Temperature ◽  
Ohmic Resistance ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
First Time

For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – ​​voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20-400 ° C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cbd Method ◽  
Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

Current‐voltage characteristics of Na/p‐GaP(110) Schottky diodes

1992 ◽  
Vol 72 (9) ◽  
pp. 4486-4487 ◽  
Author(s):  
M. von der Emde ◽  
D. R. T. Zahn ◽  
Ch. Schultz ◽  
D. A. Evans ◽  
K. Horn
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics
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