scholarly journals Влияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки

2020 ◽  
Vol 46 (6) ◽  
pp. 35
Author(s):  
В.В. Козловский ◽  
O. Корольков ◽  
К.С. Давыдовская ◽  
A.А. Лебедев ◽  
М.Е. Левинштейн ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Resistance ◽  
Schottky Diodes ◽  
Irradiation Temperature ◽  
Ohmic Resistance ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
First Time

For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – ​​voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20-400 ° C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 359-364 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
L. Rigutti ◽  
Filippo Nava
Keyword(s):  
Silicon Carbide ◽  
Deep Level ◽  
Particle Energy ◽  
Free Carrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

2017 ◽  
Vol 897 ◽  
pp. 447-450 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this paper investigation of degradation 4H SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV was doine. It was determined the carrier removal rate (Vd), which amounted to 0.07 - 0.09 cm-1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics of up to doses ~ 1017 cm-2. It is concluded that the radiation resistance of SiC Schottky diodes is much greater than the radiation resistance of Si p-i-n diodes with the same breakdown voltages

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 619-622 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Lucia Calcagno ◽  
Gaetano Foti ◽  
Francesco La Via
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Free Carrier ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Nitrogen Concentrations ◽  
Current Voltage Characteristics

The defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes. Capacitance-voltage and Current-voltage characteristics of the diodes fabricated in epilayers doped with different nitrogen concentrations were monitored before and after irradiation with different fluences. The Capacitance-voltage curves show free carrier compensation after low fluence irradiation and it was found that the reduction of carriers per ion induced vacancy increases with nitrogen content. The forward current-voltage characteristics of the diodes show an increase in the series resistance after irradiation. This change is mainly related to the high compensation occurring around the end of the ion range.

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

2018 ◽  
Vol 924 ◽  
pp. 217-220 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Anatoly M. Strel'chuk ◽  
Andrey N. Yakimenko ◽  
Vitalii V. Kozlovski
Keyword(s):  
High Temperature ◽  
Radiation Resistance ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Simultaneous Effect ◽  
Current Voltage ◽  
Device Structures ◽  
Current Voltage Characteristics ◽  
Mev Protons

The change in the current-voltage characteristics and in Nd-Navalues in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Sign in / Sign up

Export Citation Format

Share Document