Effects of Deposition Rate on the Structural, Morphological and Optical Properties of Brookite TiO2 Films Prepared by MOCVD

2017 ◽  
Vol 898 ◽  
pp. 1787-1795
Author(s):  
Wei Guang Wang ◽  
Ming Xian Wang ◽  
Xian Jin Feng ◽  
Jin Ma

Compared to anatase and rutile TiO2, the brookite TiO2 (b-TiO2) is relatively seldom investigated, because it is difficult to be prepared. In order to explore a scientific and effective approach to prepare high quality b-TiO2 crystalline films, the effects of deposition rate on the properties of b-TiO2 films prepared on yttria-stabilized zirconia (YSZ) (110) substrates by metal organic chemical vapor deposition (MOCVD) were investigated in this study. The structural analyses indicated that the b-TiO2 film prepared with the lowest deposition rate of 1.25 Å/min had the best single crystalline quality for which the epitaxial relationship between the film and substrate was determined as b-TiO2(120) || YSZ(110) with an in-plane epitaxial relationship of b-TiO2[001]|| YSZ[001] and b-TiO2[20]||YSZ[10]. The RMS surface roughness of the obtained films decreased from 7.02 to 1.11 nm as the deposition rate decreased. The average transmittances of all the obtained b-TiO2 films exceeded 90% in the visible range. The optical band gaps increased from 3.54 to 3.63 eV as the deposition rate decreased. Apparently, the deposition rate has a significant influence on the structural, morphological and optical properties. Therefore, it provides a practicable way to manipulate such properties of b-TiO2 films for different applications in the field of transparent optoelectronic devices.

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L698-L701 ◽  
Author(s):  
Marco Sacilotti ◽  
Luc Imhoff ◽  
Colette Dumas ◽  
Pierre Viste ◽  
Jean-Claude Vial ◽  
...  

2013 ◽  
Vol 746 ◽  
pp. 369-373 ◽  
Author(s):  
Yu Lv ◽  
Wei Mi ◽  
Cai Na Luan ◽  
Jin Ma

Ga2O3thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3films were investigated including the influence by annealing for the obtained films. The Ga2O3films on sapphire () and () substrate areα-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gapEgwas about 4.755.15 eV. TheEgof the samples increases after annealing at 900 °C.


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