The Phase Composition and Structure of Silicon-Carbon Coatings

The effect of the formation and heat treatment modes of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the ratio of Si-C/Si-O bonds by 1.9 times. It is shown that doping of carbon coatings with silicon carbide increases their heat resistance.

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High Resolution FIB as a General Materials Science Tool

Microscopy and Microanalysis ◽

10.1017/s1431927600022583 ◽

1998 ◽

Vol 4 (S2) ◽

pp. 492-493 ◽

Cited By ~ 5

Author(s):

M.W. Phaneuf ◽

J. Li ◽

T. Malis

Keyword(s):

Integrated Circuit ◽

Focused Ion Beam ◽

Materials Science ◽

Ion Beam ◽

General Purpose ◽

Ion Source ◽

Specimen Preparation ◽

Ion Beam Sputtering ◽

Imaging Characteristics ◽

Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

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TiOxCy Thin Film Deposition by CO2+-Ion Beam Sputtering of Titanium

MRS Proceedings ◽

10.1557/proc-316-917 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

BERTILO E. KEMPF

Keyword(s):

Near Infrared ◽

Ion Beam ◽

Thin Film Deposition ◽

Ion Source ◽

Film Deposition ◽

Refractive Indices ◽

Ion Beam Sputtering ◽

Infrared Wavelength ◽

Beam Sputtering ◽

Current Densities

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.

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Synthesis of silicon carbide thin films by ion beam sputtering

Thin Solid Films ◽

10.1016/s0040-6090(98)00895-5 ◽

1998 ◽

Vol 335 (1-2) ◽

pp. 80-84 ◽

Cited By ~ 20

Author(s):

A. Valentini ◽

A. Convertino ◽

M. Alvisi ◽

R. Cingolani ◽

T. Ligonzo ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

MRS Proceedings ◽

10.1557/proc-592-219 ◽

1999 ◽

Vol 592 ◽

Cited By ~ 2

Author(s):

L. C. Chen ◽

C. T. Wu ◽

C.-Y Wen ◽

J.-J. Wu ◽

W. T. Liu ◽

...

Keyword(s):

Carbon Nitride ◽

Ion Beam ◽

Interface Roughness ◽

Electrical Characteristics ◽

Ion Beam Sputtering ◽

Electrical Measurements ◽

Sputtering Deposition ◽

Silicon Carbon ◽

Beam Sputtering ◽

Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

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Deposition of silicon carbon nitride films by ion beam sputtering

Thin Solid Films ◽

10.1016/s0040-6090(99)00458-7 ◽

1999 ◽

Vol 355-356 ◽

pp. 417-422 ◽

Cited By ~ 30

Author(s):

J.-J Wu ◽

C.-T Wu ◽

Y.-C Liao ◽

T.-R Lu ◽

L.C Chen ◽

...

Keyword(s):

Carbon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Silicon Carbon ◽

Beam Sputtering ◽

Silicon Carbon Nitride

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Study of ion beam sputtering using a glow discharge ion source

Brazilian Journal of Physics ◽

10.1590/s0103-97332010000100005 ◽

2010 ◽

Vol 40 (1) ◽

pp. 26-29 ◽

Cited By ~ 3

Author(s):

M.M. Abdelrahman

Keyword(s):

Glow Discharge ◽

Ion Beam ◽

Ion Source ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.474-476.448 ◽

2011 ◽

Vol 474-476 ◽

pp. 448-453

Author(s):

Yong Ping Ai ◽

Ying Ying Zeng ◽

Li Jun Liu ◽

Xiao Ming Huang ◽

Tai Ping Zhou

Keyword(s):

Thin Film ◽

Lattice Distortion ◽

Ion Beam ◽

Film Structure ◽

Ion Source ◽

Crystal Defects ◽

Low Energy ◽

Ion Beam Sputtering ◽

Copper Target ◽

Beam Sputtering

This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.

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Investigation of the process of reactive ion-beam sputtering of gallium arsenide using optical emission spectroscopy

Doklady BGUIR ◽

10.35596/1729-7648-2021-19-1-5-10 ◽

2021 ◽

Vol 19 (1) ◽

pp. 5-10

Author(s):

E. V. Тelesh

Keyword(s):

Gallium Arsenide ◽

Chemical Interaction ◽

Ion Beam ◽

Optical Emission ◽

Ion Source ◽

Pure Oxygen ◽

Ion Beam Sputtering ◽

Positive Potential ◽

Emission Analysis ◽

Beam Sputtering

The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide using optical emission analysis of plasma in the target region to determine the optimal conditions for the formation of intrinsic GaAs oxides. The ion source was a plasmatron based on an anode layer accelerator (UAS), which generated a stream of accelerated argon and oxygen ions with an energy of 400–1200 eV. The target was made from tellurium doped gallium arsenide. Intense GaI lines (2874.2 Å, 2943.6 Å, 4033.0 Å and 4172.1 Å), atomic argon ArI, argon ions, and also FeI lines were detected in the spectrum upon sputtering of GaAs by Ar+ ions. The appearance of iron lines can be explained by the sputtering of the pole tips of the magnetic system of the ion source. An increase in the accelerating voltage from 1 to 3 kV leads to an increase in the intensity of the peaks of atomic gallium GaI (4172.1 Å) by 2.38 times, the GaI line (4033.0 Å) by 3.25 times, the GaI line (2943.6 Å) 3.4 times, GaI lines (2874.2 Å) 5 times. It was found that an increase in the partial pressure of oxygen leads to a sharp decrease in the peaks of GaI (4033.0 Å) and GaI (4172.1 Å) due to the chemical interaction of gallium and oxygen. Sputtering in pure oxygen reduces the intensity of these peaks by 8 and 5 times, respectively. The intensities of the peaks of atomic gallium GaI (2874.2 Å) and GaI (2943.6 Å) decreased in 2 and 1.78 times, respectively. In the presence of a positive potential on the target, the intensity of all lines of atomic gallium monotonically decreases with increasing potential. In the emission spectrum, lines of atomic oxygen OI (7774.2 Å) and molecular positive ions O+2 (6418.7 Å, 6026.4 Å, 5631.9 Å and 5295.7 Å) were detected. In the presence of a positive potential on the target, a monotonic decrease in the intensity of the above oxygen lines was observed. This indicates an intensification of chemical interaction of oxygen with target elements and, accordingly, a decrease in the free active oxygen particles.

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Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

MRS Proceedings ◽

10.1557/proc-354-81 ◽

1994 ◽

Vol 354 ◽

Author(s):

R. Valizadeh ◽

J.S. Colligon ◽

S.E. Donnelly ◽

C.A. Faunce ◽

D. Park ◽

...

Keyword(s):

Nitrogen Content ◽

Ion Beam ◽

Arrival Rate ◽

Zirconium Nitride ◽

Ion Beam Sputtering ◽

Tem Analysis ◽

Grain Sizes ◽

Composition And Structure ◽

Wide Range ◽

Beam Sputtering

AbstractThe growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at. %, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes l-15nm which depend on the nitrogen content and the deposition temperature.

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