Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
R. Valizadeh ◽  
J.S. Colligon ◽  
S.E. Donnelly ◽  
C.A. Faunce ◽  
D. Park ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Ion Beam ◽  
Arrival Rate ◽  
Zirconium Nitride ◽  
Ion Beam Sputtering ◽  
Tem Analysis ◽  
Grain Sizes ◽  
Composition And Structure ◽  
Wide Range ◽  
Beam Sputtering

AbstractThe growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at. %, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes l-15nm which depend on the nitrogen content and the deposition temperature.

Microstructure and Properties of TiAlN/AlN Composite Film Deposited on Cam’s Profile by Ion Beam Sputtering Technique

2010 ◽  
Vol 443 ◽  
pp. 465-468
Author(s):  
Pei Quan Guo ◽  
Shou Ren Wang ◽  
Huan Yong Cui
Keyword(s):  
Composite Film ◽  
Ion Beam ◽  
Temperature Phase ◽  
Ion Beam Sputtering ◽  
Shape Accuracy ◽  
Tem Analysis ◽  
Sputtering Deposition ◽  
Microstructure And Properties ◽  
Operation Temperature ◽  
Beam Sputtering

The study reports a new surface formation technology during manufacturing process of parallel indexing cam mechanism, ion beam sputtering deposition, in which the operation temperature can be controlled below the limitation of phases exchanging or at room temperature. Phase exchanging deformation can be avoided and the shape accuracy and dimension accuracy can be improved compared with surface quenching process. The microstructure and properties of TiAlN/AlN composite film deposited on the profile surface of cam (made of 45 steel) by ion beam sputtering deposition were discussed. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM) analysis has been used to characterize film’s microstructure and properties. The micro-hardness and adherence grade were tested.

The Phase Composition and Structure of Silicon-Carbon Coatings

2019 ◽  
Vol 970 ◽  
pp. 283-289
Author(s):  
Alexander S. Rudenkov ◽  
Alexander V. Rogachev ◽  
Alexander N. Kupo ◽  
Petr A. Luchnikov ◽  
Nataliya Chicherina
Keyword(s):  
Heat Treatment ◽  
Silicon Carbide ◽  
Phase Composition ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Sputtering ◽  
Carbon Coatings ◽  
Silicon Carbon ◽  
Composition And Structure ◽  
Beam Sputtering

The effect of the formation and heat treatment modes of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the ratio of Si-C/Si-O bonds by 1.9 times. It is shown that doping of carbon coatings with silicon carbide increases their heat resistance.

Ion Beam Sputter Deposition of Refractory Metal Oxides

1994 ◽  
Vol 354 ◽  
Author(s):  
B.E. Kempf ◽  
H.W. Dinges ◽  
A. PÖcker
Keyword(s):  
Near Infrared ◽  
Filter Design ◽  
Ion Beam ◽  
Optical Filter ◽  
Pure Metal ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Wide Range ◽  
Beam Sputtering ◽  
Ion Beam Sputter Deposition

AbstractOxides of hafnium, niobium, tantalum, and zirconium are deposited by ion beam sputtering of the pure metal targets using CO2 as working gas. The resulting thin films are amorphous, featureless smooth and of excellent adherence to semiconductor substrates. Despite a certain content of carbon they are highly transparent in the visible and near infrared wavelength range as determined by spectroscopic ellipsometry. Their wide range of refractive indices makes them suitable for multilayer optical filter design.

Auger and TEM analysis of multilayer IC contacts

1994 ◽  
Vol 52 ◽  
pp. 818-819
Author(s):  
R. W. Buttry ◽  
C. R. Hills ◽  
G. C. Nelson ◽  
T. Tribble
Keyword(s):  
Integrated Circuits ◽  
Ion Beam ◽  
Thin Layers ◽  
Nanometer Scale ◽  
Ion Beam Sputtering ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Layer Structures ◽  
Beam Sputtering ◽  
Depth Scale

With the continued shrinkage of the dimensions (both laterally and in depth) of integrated circuits (IC), knowledge of the interactions that occur over nanometer scale distances becomes increasingly important. This requirement has pushed the capabilities of the tools used to analyze these structuresto their maximum. Two techniques which are frequently used to analyze thin layer structures are AugerElectron Spectroscopy (AES) and Transmission Electron Microscopy (TEM).AES combined with ion beam sputtering is used to measure the elemental composition as a function of sputter time. With suitable calibration, the sputter time scale can be converted to a depth scale. Theprofiles can also be used to study the interfacial reactions for thin layers. TEM is frequently used to accurately measure layer thicknesses and the layer elemental constituents can be identified byEnergy Dispersive Spectroscopy (EDS). When the layer thicknesses approach a few tens of A there are problems associated with interpreting the data from both of these techniques, particularly the data obtained near the interfaces.

Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

2017 ◽  
Vol 401 ◽  
pp. 172-180 ◽  
Author(s):  
Seyed Rahim Kiahosseini ◽  
Abdollah Afshar ◽  
Majid Mojtahedzadeh Larijani ◽  
Mardali Yousefpour
Keyword(s):  
Magnesium Alloy ◽  
Ion Beam ◽  
Zirconium Nitride ◽  
Ion Beam Sputtering ◽  
Az91 Magnesium Alloy ◽  
Beam Sputtering ◽  
Az91 Magnesium

Oxygen-Containing Diatomic Dications in the Gas Phase

2009 ◽  
Vol 15 (2) ◽  
pp. 315-324 ◽  
Author(s):  
Jirí Fišer ◽  
Klaus Franzreb ◽  
Jan Lörinčík ◽  
Peter Williams
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Mass Spectra ◽  
Theoretical Study ◽  
Ion Beam ◽  
High Current ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Wide Range ◽  
Beam Sputtering

A variety of oxygen-containing diatomic dications XO2+ can be produced in the gas phase by prolonged high-current 16O− ion surface bombardment (oxygen ion beam sputtering) of a wide range of sample materials. These gas-phase species were detected by mass spectrometry at half-integer m/z values for ion flight times of the order of ∼10−5 s. Examples provided here include ion mass spectra of AsO2+, GaO2+, SbO2+, AgO2+, CrO2+ and BeO2+. A detailed theoretical study of the diatomic dication system BeO2+ is also presented.

Epitaxial growth and interface roughness of PdMn/Fe bilayer structures grown by ion-beam sputtering

2001 ◽  
Vol 672 ◽  
Author(s):  
Ning Cheng ◽  
J.P. Ahn ◽  
Werner Grogger ◽  
Kannan Krishnan
Keyword(s):  
Ion Beam ◽  
Interface Roughness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Magnetic Exchange ◽  
Transmission Electron ◽  
Magnetic Exchange Coupling ◽  
Wide Range ◽  
Beam Sputtering

ABSTRACTDifferent orientations of PdMn films and different stacking orders of PdMn and Fe on MgO(001) were studied. At low temperatures (T< 280°C) dominated by the kinetics of growth, a-axis orientated [PdMn(100)/Fe(001)/MgO(001)] was stabilized whilst c-axis [PdMn(001)/Fe(001)/MgO(001)] were obtained at higher temperatures (T> 300°C). The inverted structures, Fe(001)/PdMn(001)/MgO(001) and Fe(001)/PdMn(100)/MgO(001), were obtained epitaxially for the first time. The magnetic exchange coupling (He) of these PdMn/Fe bilayers show a wide range in values: ∼ 10 Oe for annealed a-axis samples, ∼ 33 Oe for c-axis normal samples and ∼ 68 Oe for c-axis inverted samples. The interface roughness of these samples was characterized by energy-filtered transmission electron microscopy (EFTEM). The orientation relationships were confirmed by x-ray diffraction and TEM. The possible origins for the He difference in a-axis and c-axis growth samples and the normal and inverted samples are discussed.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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