Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 109-112 ◽  
Author(s):  
Jeong Hyuk Yim ◽  
Ho Keun Song ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
Jong Ho Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Oscillation Frequency ◽  
Power Gain ◽  
Plasma Damage ◽  
Maximum Oscillation Frequency ◽  
Thermal Oxide ◽  
Field Oxide ◽  
Gate Region ◽  
Rf Performances

4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were characterized. A modified RCA method was used to clean the substrate before each procedure. Sacrificial oxide was grown after channel layer etching to eliminate plasma damage to the gate region. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The maximum oscillation frequency of 26.4 GHz and the cut-off frequency of 7.2 GHz were obtained. The power gain was 8.4 dB and the output power was 2.8 W/mm at 2 GHz.

RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate

2006 ◽  
Vol 527-529 ◽  
pp. 1235-1238
Author(s):  
Makoto Ogata ◽  
S. Katakami ◽  
Shuichi Ono ◽  
Manabu Arai
Keyword(s):  
Ion Implantation ◽  
Oscillation Frequency ◽  
Contact Region ◽  
Power Gain ◽  
Doping Density ◽  
Maximum Oscillation Frequency ◽  
Saturated Output Power ◽  
Nitrogen Ions ◽  
Activation Annealing ◽  
Channel Region

We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate by using ion implantation for the channel layer and contact region. Nitrogen ions were implanted to obtain a 0.25-μm-thick box-shaped profile with a doping density of 3.0×1017/cm3 for the channel region and to obtain a 0.2-μm-thick box-shaped profile with a doping density of 2.0×1020/cm3 for the contact region. Activation annealing is done in argon ambient at 1300 °C for 30 minutes. A 0.5- μm gate MESFET with 100-μm gate width showed a cut-off frequency of 7.5 GHz and a maximum oscillation frequency of 22.2 GHz. And its saturated output power was 25 dBm (3.16 W/mm), power gain was 6.7 dB and PAE was 15.7%.

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

2007 ◽  
Vol 556-557 ◽  
pp. 823-826
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sang Cheol Kim ◽  
Sung Jae Joo ◽  
Nam Kyun Kim
Keyword(s):  
Oscillation Frequency ◽  
Doping Concentration ◽  
Drain Current ◽  
Potential Well ◽  
Device Structure ◽  
Maximum Oscillation Frequency ◽  
Delta Doping ◽  
Simulation Results ◽  
Effective Channel ◽  
Rf Performances

A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

Effects of ion implantation on the brazing properties of high purity alumina

2012 ◽  
Vol 206 (8-9) ◽  
pp. 2098-2104 ◽  
Author(s):  
Haiyang Xia ◽  
Aiping Wu ◽  
Yinglong Fan ◽  
Guisheng Zou ◽  
Jialie Ren
Keyword(s):  
Ion Implantation ◽  
High Purity

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

2011 ◽  
Vol 109 (8) ◽  
pp. 083530 ◽  
Author(s):  
J. O. Orwa ◽  
C. Santori ◽  
K. M. C. Fu ◽  
B. Gibson ◽  
D. Simpson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Nitrogen Vacancy ◽  
Color Centers

High-purity Zirconium under Niobium ion implantation: possibility of a dynamic precipitation?

2015 ◽  
Vol 95 (33) ◽  
pp. 3727-3744 ◽  
Author(s):  
A.K. Revelly ◽  
H.W. Becker ◽  
B. Vishwanadh ◽  
K.V. Mani Krishna ◽  
R. Tewari ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Purity ◽  
Dynamic Precipitation

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

2019 ◽  
Vol 11 (45) ◽  
pp. 42496-42503 ◽  
Author(s):  
Donglai Zhong ◽  
Huiwen Shi ◽  
Li Ding ◽  
Chenyi Zhao ◽  
Jingxia Liu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Radio Frequency ◽  
Oscillation Frequency ◽  
Maximum Oscillation Frequency ◽  
Carbon Nanotube Film
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